Development of Modulation p-Doped 1310 nm InAs/GaAs Quantum Dot Laser Materials and Ultrashort Cavity Fabry-Perot and Distributed-Feedback Laser Diodes
文献类型：期刊论文
| 作者 | Wang, Jie ; Zhang, Ruiying(张瑞英); Ning, Jiqiang(宁吉强); Min, Jiahua; Zheng, Changcheng; Wang, Xu; Zhang, Ziyang(张子旸); Chen, Hongmei(陈红梅); Huang, Yuanqing; Hou, Chuncai
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| 刊名 | ACS PHOTONICS
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| 出版日期 | 2018 |
| 其他题名 | Development of Modulation p-Doped 1310 nm InAs/GaAs Quantum Dot Laser Materials and Ultrashort Cavity Fabry-Perot and Distributed-Feedback Laser Diodes |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/6057]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_张子旸团队 |
| 作者单位 | 中国科学院苏州纳米技术与纳米仿生研究所 |
| 推荐引用方式 GB/T 7714 | Wang, Jie,Zhang, Ruiying,Ning, Jiqiang,et al. Development of Modulation p-Doped 1310 nm InAs/GaAs Quantum Dot Laser Materials and Ultrashort Cavity Fabry-Perot and Distributed-Feedback Laser Diodes[J]. ACS PHOTONICS,2018. |
| APA | Wang, Jie.,Zhang, Ruiying.,Ning, Jiqiang.,Min, Jiahua.,Zheng, Changcheng.,...&Li, Qizhu.(2018).Development of Modulation p-Doped 1310 nm InAs/GaAs Quantum Dot Laser Materials and Ultrashort Cavity Fabry-Perot and Distributed-Feedback Laser Diodes.ACS PHOTONICS. |
| MLA | Wang, Jie,et al."Development of Modulation p-Doped 1310 nm InAs/GaAs Quantum Dot Laser Materials and Ultrashort Cavity Fabry-Perot and Distributed-Feedback Laser Diodes".ACS PHOTONICS (2018). |
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