Sulfur-Doped Black Phosphorus Field-Effect Transistors with Enhanced Stability
文献类型：期刊论文
| 作者 | Liu, Zhongyuan; Yang, Ruilong; Lv, Weiming; Yang, Bingchao; Wang, Bochong; Wan, Wenhui; Ge, Yanfeng; Hao, Chunxue; Xiang, Jianyong; Zhang, Baoshun(张宝顺)
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| 刊名 | ACS APPLIED MATERIALS & INTERFACES
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| 出版日期 | 2018 |
| 其他题名 | Sulfur-Doped Black Phosphorus Field-Effect Transistors with Enhanced Stability |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/6079]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
| 作者单位 | 中国科学院苏州纳米技术与纳米仿生研究所 |
| 推荐引用方式 GB/T 7714 | Liu, Zhongyuan,Yang, Ruilong,Lv, Weiming,et al. Sulfur-Doped Black Phosphorus Field-Effect Transistors with Enhanced Stability[J]. ACS APPLIED MATERIALS & INTERFACES,2018. |
| APA | Liu, Zhongyuan.,Yang, Ruilong.,Lv, Weiming.,Yang, Bingchao.,Wang, Bochong.,...&Zeng, Zhongming.(2018).Sulfur-Doped Black Phosphorus Field-Effect Transistors with Enhanced Stability.ACS APPLIED MATERIALS & INTERFACES. |
| MLA | Liu, Zhongyuan,et al."Sulfur-Doped Black Phosphorus Field-Effect Transistors with Enhanced Stability".ACS APPLIED MATERIALS & INTERFACES (2018). |
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