Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells
文献类型：期刊论文
| 作者 | Zhao, Degang; Jiang, Desheng; Shi, Dongping; Zhu, Jianjun; Liu, Zongshun; Chen, Ping; Yang, Jing ; Liang, Feng; Liu, Shuangtao; Xing, Yao
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| 刊名 | OPTICS EXPRESS
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| 出版日期 | 2018 |
| 其他题名 | Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/6109]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 作者单位 | 中国科学院苏州纳米技术与纳米仿生研究所 |
| 推荐引用方式 GB/T 7714 | Zhao, Degang,Jiang, Desheng,Shi, Dongping,et al. Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells[J]. OPTICS EXPRESS,2018. |
| APA | Zhao, Degang.,Jiang, Desheng.,Shi, Dongping.,Zhu, Jianjun.,Liu, Zongshun.,...&Liu, Wei.(2018).Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells.OPTICS EXPRESS. |
| MLA | Zhao, Degang,et al."Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells".OPTICS EXPRESS (2018). |
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