High f(T) AlGa(In)N/GaN HEMTs Grown on Si With a Low Gate Leakage and a High ON/OFF Current Ratio
文献类型：期刊论文
| 作者 | Zhu, Guangrun; Gao, Hongwei(高宏伟); Sun, Qian(孙钱) ; Chen, Tangsheng; Yang, Hui(杨辉); Dai, Shujun(戴淑君); Zhou, Yu(周宇); Zhong, Yaozong(钟耀宗); Zhang, Kai(张凯)
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| 刊名 | IEEE ELECTRON DEVICE LETTERS
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| 出版日期 | 2018 |
| 其他题名 | High f(T) AlGa(In)N/GaN HEMTs Grown on Si With a Low Gate Leakage and a High ON/OFF Current Ratio |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/6123]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_孙钱团队 |
| 作者单位 | 中国科学院苏州纳米技术与纳米仿生研究所 |
| 推荐引用方式 GB/T 7714 | Zhu, Guangrun,Gao, Hongwei,Sun, Qian,et al. High f(T) AlGa(In)N/GaN HEMTs Grown on Si With a Low Gate Leakage and a High ON/OFF Current Ratio[J]. IEEE ELECTRON DEVICE LETTERS,2018. |
| APA | Zhu, Guangrun.,Gao, Hongwei.,Sun, Qian.,Chen, Tangsheng.,Yang, Hui.,...&Zhang, Kai.(2018).High f(T) AlGa(In)N/GaN HEMTs Grown on Si With a Low Gate Leakage and a High ON/OFF Current Ratio.IEEE ELECTRON DEVICE LETTERS. |
| MLA | Zhu, Guangrun,et al."High f(T) AlGa(In)N/GaN HEMTs Grown on Si With a Low Gate Leakage and a High ON/OFF Current Ratio".IEEE ELECTRON DEVICE LETTERS (2018). |
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