Room-temperature bonding of GaAs//Si and GaN//GaAs wafers with low electrical resistance
文献类型：期刊论文
| 作者 | Ajima, Yoshiaki; Nakamura, Yuki; Murakami, Kenta; Teramoto, Hideo; Jomen, Ryota; Xing Zhiwei; Dai, Pan(代盼); Lu, Shulong(陆书龙) ; Uchida, Shiro
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| 刊名 | APPLIED PHYSICS EXPRESS
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| 出版日期 | 2018 |
| 其他题名 | Room-temperature bonding of GaAs//Si and GaN//GaAs wafers with low electrical resistance |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/6166]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队 |
| 作者单位 | 中国科学院苏州纳米技术与纳米仿生研究所 |
| 推荐引用方式 GB/T 7714 | Ajima, Yoshiaki,Nakamura, Yuki,Murakami, Kenta,et al. Room-temperature bonding of GaAs//Si and GaN//GaAs wafers with low electrical resistance[J]. APPLIED PHYSICS EXPRESS,2018. |
| APA | Ajima, Yoshiaki.,Nakamura, Yuki.,Murakami, Kenta.,Teramoto, Hideo.,Jomen, Ryota.,...&Uchida, Shiro.(2018).Room-temperature bonding of GaAs//Si and GaN//GaAs wafers with low electrical resistance.APPLIED PHYSICS EXPRESS. |
| MLA | Ajima, Yoshiaki,et al."Room-temperature bonding of GaAs//Si and GaN//GaAs wafers with low electrical resistance".APPLIED PHYSICS EXPRESS (2018). |
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