中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effects of channel thickness on structure and transport properties of AlGaN/InGaN heterostructures grown by pulsed metal organic chemical vapor deposition

文献类型:期刊论文

作者Xu, Shengrui; Zhang, Yachao; Wang, Zhizhe; Bao, Weimin; Zhang, Tao; Huang, Jun(黄俊); Zhang, Jincheng; Hao, Yue
刊名MATERIALS RESEARCH BULLETIN
出版日期2018
其他题名Effects of channel thickness on structure and transport properties of AlGaN/InGaN heterostructures grown by pulsed metal organic chemical vapor deposition
语种英语
源URL[http://ir.sinano.ac.cn/handle/332007/6187]  
专题苏州纳米技术与纳米仿生研究所_测试分析平台
作者单位中国科学院苏州纳米技术与纳米仿生研究所
推荐引用方式
GB/T 7714
Xu, Shengrui,Zhang, Yachao,Wang, Zhizhe,et al. Effects of channel thickness on structure and transport properties of AlGaN/InGaN heterostructures grown by pulsed metal organic chemical vapor deposition[J]. MATERIALS RESEARCH BULLETIN,2018.
APA Xu, Shengrui.,Zhang, Yachao.,Wang, Zhizhe.,Bao, Weimin.,Zhang, Tao.,...&Hao, Yue.(2018).Effects of channel thickness on structure and transport properties of AlGaN/InGaN heterostructures grown by pulsed metal organic chemical vapor deposition.MATERIALS RESEARCH BULLETIN.
MLA Xu, Shengrui,et al."Effects of channel thickness on structure and transport properties of AlGaN/InGaN heterostructures grown by pulsed metal organic chemical vapor deposition".MATERIALS RESEARCH BULLETIN (2018).

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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