Effects of channel thickness on structure and transport properties of AlGaN/InGaN heterostructures grown by pulsed metal organic chemical vapor deposition
文献类型:期刊论文
作者 | Xu, Shengrui; Zhang, Yachao; Wang, Zhizhe; Bao, Weimin; Zhang, Tao![]() ![]() |
刊名 | MATERIALS RESEARCH BULLETIN
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出版日期 | 2018 |
其他题名 | Effects of channel thickness on structure and transport properties of AlGaN/InGaN heterostructures grown by pulsed metal organic chemical vapor deposition |
语种 | 英语 |
源URL | [http://ir.sinano.ac.cn/handle/332007/6187] ![]() |
专题 | 苏州纳米技术与纳米仿生研究所_测试分析平台 |
作者单位 | 中国科学院苏州纳米技术与纳米仿生研究所 |
推荐引用方式 GB/T 7714 | Xu, Shengrui,Zhang, Yachao,Wang, Zhizhe,et al. Effects of channel thickness on structure and transport properties of AlGaN/InGaN heterostructures grown by pulsed metal organic chemical vapor deposition[J]. MATERIALS RESEARCH BULLETIN,2018. |
APA | Xu, Shengrui.,Zhang, Yachao.,Wang, Zhizhe.,Bao, Weimin.,Zhang, Tao.,...&Hao, Yue.(2018).Effects of channel thickness on structure and transport properties of AlGaN/InGaN heterostructures grown by pulsed metal organic chemical vapor deposition.MATERIALS RESEARCH BULLETIN. |
MLA | Xu, Shengrui,et al."Effects of channel thickness on structure and transport properties of AlGaN/InGaN heterostructures grown by pulsed metal organic chemical vapor deposition".MATERIALS RESEARCH BULLETIN (2018). |
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