中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells

文献类型:期刊论文

作者Zhao, Degang; Xing, Yao; Liu, Wei; Li, Mo; Wang, Wenjie; Zhang, Liqun(张立群); Liu, Shuangtao; Yang, Jing; Liang, Feng; Liu, Zongshun
刊名SUPERLATTICES AND MICROSTRUCTURES
出版日期2018
其他题名The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells
语种英语
源URL[http://ir.sinano.ac.cn/handle/332007/6204]  
专题苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
作者单位中国科学院苏州纳米技术与纳米仿生研究所
推荐引用方式
GB/T 7714
Zhao, Degang,Xing, Yao,Liu, Wei,et al. The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells[J]. SUPERLATTICES AND MICROSTRUCTURES,2018.
APA Zhao, Degang.,Xing, Yao.,Liu, Wei.,Li, Mo.,Wang, Wenjie.,...&Jiang, Desheng.(2018).The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells.SUPERLATTICES AND MICROSTRUCTURES.
MLA Zhao, Degang,et al."The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells".SUPERLATTICES AND MICROSTRUCTURES (2018).

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。