中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Simulation study on AlGaN/GaN diode with Gamma-shaped anode for ultra-low turn-on voltage

文献类型:期刊论文

作者Wang, Zeheng; Ren, Kailin; Guo, Songnan; Luo, Yi; Jin, Xiaosheng(金晓盛); Wang, Zirui; Zhang, Bo; Yang, Lei(杨磊); Sun, Ruize; Cao, Jun
刊名SUPERLATTICES AND MICROSTRUCTURES
出版日期2018
其他题名Simulation study on AlGaN/GaN diode with Gamma-shaped anode for ultra-low turn-on voltage
语种英语
源URL[http://ir.sinano.ac.cn/handle/332007/6205]  
专题苏州纳米技术与纳米仿生研究所_纳米加工公共平台
作者单位中国科学院苏州纳米技术与纳米仿生研究所
推荐引用方式
GB/T 7714
Wang, Zeheng,Ren, Kailin,Guo, Songnan,et al. Simulation study on AlGaN/GaN diode with Gamma-shaped anode for ultra-low turn-on voltage[J]. SUPERLATTICES AND MICROSTRUCTURES,2018.
APA Wang, Zeheng.,Ren, Kailin.,Guo, Songnan.,Luo, Yi.,Jin, Xiaosheng.,...&Chen, Wanjun.(2018).Simulation study on AlGaN/GaN diode with Gamma-shaped anode for ultra-low turn-on voltage.SUPERLATTICES AND MICROSTRUCTURES.
MLA Wang, Zeheng,et al."Simulation study on AlGaN/GaN diode with Gamma-shaped anode for ultra-low turn-on voltage".SUPERLATTICES AND MICROSTRUCTURES (2018).

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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