Influence of hydrogen impurity on the resistivity of low temperature grown p-AlxGa1-xN layer (0.08 <= x <= 0.104)
文献类型：期刊论文
| 作者 | Liu, Wei; Liang, Feng; Yang, Ying; Zhao, Degang; Jiang, Desheng; Liu, Zongshun; Zhu, Jianjun; Chen, Ping; Liu, Shuangtao; Xing, Yao |
| 刊名 | SUPERLATTICES AND MICROSTRUCTURES
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| 出版日期 | 2018 |
| 其他题名 | Influence of hydrogen impurity on the resistivity of low temperature grown p-AlxGa1-xN layer (0.08 <= x <= 0.104) |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/6206]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 作者单位 | 中国科学院苏州纳米技术与纳米仿生研究所 |
| 推荐引用方式 GB/T 7714 | Liu, Wei,Liang, Feng,Yang, Ying,et al. Influence of hydrogen impurity on the resistivity of low temperature grown p-AlxGa1-xN layer (0.08 <= x <= 0.104)[J]. SUPERLATTICES AND MICROSTRUCTURES,2018. |
| APA | Liu, Wei.,Liang, Feng.,Yang, Ying.,Zhao, Degang.,Jiang, Desheng.,...&Du, Guotong.(2018).Influence of hydrogen impurity on the resistivity of low temperature grown p-AlxGa1-xN layer (0.08 <= x <= 0.104).SUPERLATTICES AND MICROSTRUCTURES. |
| MLA | Liu, Wei,et al."Influence of hydrogen impurity on the resistivity of low temperature grown p-AlxGa1-xN layer (0.08 <= x <= 0.104)".SUPERLATTICES AND MICROSTRUCTURES (2018). |
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