Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms
文献类型：期刊论文
| 作者 | Zhu, J. J.; Liang, F.; Liu, W.; Zhang, L. Q.(张立群); Liu, S. T.; Yang, J. ; Wang, X. W.; Zhao, D. G.; Jiang, D. S.; Chen, P.
|
| 刊名 | SUPERLATTICES AND MICROSTRUCTURES
 |
| 出版日期 | 2018 |
| 其他题名 | Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/6207]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 作者单位 | 中国科学院苏州纳米技术与纳米仿生研究所 |
| 推荐引用方式 GB/T 7714 | Zhu, J. J.,Liang, F.,Liu, W.,et al. Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms[J]. SUPERLATTICES AND MICROSTRUCTURES,2018. |
| APA | Zhu, J. J..,Liang, F..,Liu, W..,Zhang, L. Q..,Liu, S. T..,...&Liu, Z. S..(2018).Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms.SUPERLATTICES AND MICROSTRUCTURES. |
| MLA | Zhu, J. J.,et al."Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms".SUPERLATTICES AND MICROSTRUCTURES (2018). |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。