Exploring the optimum growth conditions for InAs/GaSb and GaAs/GaSb superlattices on InAs substrates by metalorganic chemical vapor deposition
文献类型:期刊论文
作者 | Zhao, Yu; Huang, Yong(黄勇); Hao, Xiujun; Teng, Yan; Wu, Qihua(吴启花); Li, Xin |
刊名 | JOURNAL OF CRYSTAL GROWTH |
出版日期 | 2018 |
其他题名 | Exploring the optimum growth conditions for InAs/GaSb and GaAs/GaSb superlattices on InAs substrates by metalorganic chemical vapor deposition |
语种 | 英语 |
源URL | [http://ir.sinano.ac.cn/handle/332007/6214] |
专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_黄勇团队 |
作者单位 | 中国科学院苏州纳米技术与纳米仿生研究所 |
推荐引用方式 GB/T 7714 | Zhao, Yu,Huang, Yong,Hao, Xiujun,et al. Exploring the optimum growth conditions for InAs/GaSb and GaAs/GaSb superlattices on InAs substrates by metalorganic chemical vapor deposition[J]. JOURNAL OF CRYSTAL GROWTH,2018. |
APA | Zhao, Yu,Huang, Yong,Hao, Xiujun,Teng, Yan,Wu, Qihua,&Li, Xin.(2018).Exploring the optimum growth conditions for InAs/GaSb and GaAs/GaSb superlattices on InAs substrates by metalorganic chemical vapor deposition.JOURNAL OF CRYSTAL GROWTH. |
MLA | Zhao, Yu,et al."Exploring the optimum growth conditions for InAs/GaSb and GaAs/GaSb superlattices on InAs substrates by metalorganic chemical vapor deposition".JOURNAL OF CRYSTAL GROWTH (2018). |
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