中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Exploring the optimum growth conditions for InAs/GaSb and GaAs/GaSb superlattices on InAs substrates by metalorganic chemical vapor deposition

文献类型:期刊论文

作者Zhao, Yu; Huang, Yong(黄勇); Hao, Xiujun; Teng, Yan; Wu, Qihua(吴启花); Li, Xin
刊名JOURNAL OF CRYSTAL GROWTH
出版日期2018
其他题名Exploring the optimum growth conditions for InAs/GaSb and GaAs/GaSb superlattices on InAs substrates by metalorganic chemical vapor deposition
语种英语
源URL[http://ir.sinano.ac.cn/handle/332007/6214]  
专题苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_黄勇团队
作者单位中国科学院苏州纳米技术与纳米仿生研究所
推荐引用方式
GB/T 7714
Zhao, Yu,Huang, Yong,Hao, Xiujun,et al. Exploring the optimum growth conditions for InAs/GaSb and GaAs/GaSb superlattices on InAs substrates by metalorganic chemical vapor deposition[J]. JOURNAL OF CRYSTAL GROWTH,2018.
APA Zhao, Yu,Huang, Yong,Hao, Xiujun,Teng, Yan,Wu, Qihua,&Li, Xin.(2018).Exploring the optimum growth conditions for InAs/GaSb and GaAs/GaSb superlattices on InAs substrates by metalorganic chemical vapor deposition.JOURNAL OF CRYSTAL GROWTH.
MLA Zhao, Yu,et al."Exploring the optimum growth conditions for InAs/GaSb and GaAs/GaSb superlattices on InAs substrates by metalorganic chemical vapor deposition".JOURNAL OF CRYSTAL GROWTH (2018).

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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