Degradation of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors under off-state electrical stress
文献类型：期刊论文
| 作者 | Zhang, Baoshun(张宝顺) ; Fan, Yaming(范亚明); Hao, Ronghui(郝荣晖); Yu, Guohao(于国浩); Zhao, Jie; Song, Liang(宋亮); Fu, Kai(付凯); Cai, Yong(蔡勇)
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| 刊名 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
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| 出版日期 | 2018 |
| 其他题名 | Degradation of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors under off-state electrical stress |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/6223]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
| 作者单位 | 中国科学院苏州纳米技术与纳米仿生研究所 |
| 推荐引用方式 GB/T 7714 | Zhang, Baoshun,Fan, Yaming,Hao, Ronghui,et al. Degradation of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors under off-state electrical stress[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2018. |
| APA | Zhang, Baoshun.,Fan, Yaming.,Hao, Ronghui.,Yu, Guohao.,Zhao, Jie.,...&Cai, Yong.(2018).Degradation of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors under off-state electrical stress.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. |
| MLA | Zhang, Baoshun,et al."Degradation of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors under off-state electrical stress".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2018). |
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