中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Luminescence Studies of Er:Ga2O3 Films: Effect of Growth and Annealing Temperatures and Oxygen Pressures

文献类型:期刊论文

作者He, Anpeng; Wang, Bing; Liu, Yonggang(刘永刚); Jiang, Yucheng; Wang, Xu; Zhang, Ziyang(张子旸); Gao, Daqiang; Yang, Junxiao; Ning, Jiqiang(宁吉强)
刊名JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
出版日期2018
其他题名Luminescence Studies of Er:Ga2O3 Films: Effect of Growth and Annealing Temperatures and Oxygen Pressures
语种英语
源URL[http://ir.sinano.ac.cn/handle/332007/6226]  
专题苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_张子旸团队
作者单位中国科学院苏州纳米技术与纳米仿生研究所
推荐引用方式
GB/T 7714
He, Anpeng,Wang, Bing,Liu, Yonggang,et al. Luminescence Studies of Er:Ga2O3 Films: Effect of Growth and Annealing Temperatures and Oxygen Pressures[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2018.
APA He, Anpeng.,Wang, Bing.,Liu, Yonggang.,Jiang, Yucheng.,Wang, Xu.,...&Ning, Jiqiang.(2018).Luminescence Studies of Er:Ga2O3 Films: Effect of Growth and Annealing Temperatures and Oxygen Pressures.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY.
MLA He, Anpeng,et al."Luminescence Studies of Er:Ga2O3 Films: Effect of Growth and Annealing Temperatures and Oxygen Pressures".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY (2018).

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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