10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current
文献类型：期刊论文
| 作者 | Wang, Qilong; Zhang, Bingliang; Du, Zhongkai; Zhao, Jie(赵杰); Chen, Fu(陈扶); Song, Liang(宋亮); Fu, Kai(付凯) ; Wu, Dongdong(吴冬东); Hao, Ronghui(郝荣晖); Zhang, Baoshun(张宝顺)
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| 刊名 | ELECTRONICS LETTERS
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| 出版日期 | 2018 |
| 其他题名 | 10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/6238]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
| 作者单位 | 中国科学院苏州纳米技术与纳米仿生研究所 |
| 推荐引用方式 GB/T 7714 | Wang, Qilong,Zhang, Bingliang,Du, Zhongkai,et al. 10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current[J]. ELECTRONICS LETTERS,2018. |
| APA | Wang, Qilong.,Zhang, Bingliang.,Du, Zhongkai.,Zhao, Jie.,Chen, Fu.,...&Yu, Guohao.(2018).10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current.ELECTRONICS LETTERS. |
| MLA | Wang, Qilong,et al."10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current".ELECTRONICS LETTERS (2018). |
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