Identification of the Structures and Sources of Shockley-Type In-Grown Stacking Faults in 4H-SiC Epilayers
文献类型：期刊论文
| 作者 | Zhang, Bao-Shun(张宝顺); Zhang, Ze-Hong(张泽红); Zhang, Li-Guo(张立国); Li, Zhe; Zhang, Xuan(张璇); Ju, Tao(鞠涛) |
| 刊名 | CRYSTAL RESEARCH AND TECHNOLOGY
 |
| 出版日期 | 2018 |
| 其他题名 | Identification of the Structures and Sources of Shockley-Type In-Grown Stacking Faults in 4H-SiC Epilayers |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/6239]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_张宝顺团队 |
| 作者单位 | 中国科学院苏州纳米技术与纳米仿生研究所 |
| 推荐引用方式 GB/T 7714 | Zhang, Bao-Shun,Zhang, Ze-Hong,Zhang, Li-Guo,et al. Identification of the Structures and Sources of Shockley-Type In-Grown Stacking Faults in 4H-SiC Epilayers[J]. CRYSTAL RESEARCH AND TECHNOLOGY,2018. |
| APA | Zhang, Bao-Shun,Zhang, Ze-Hong,Zhang, Li-Guo,Li, Zhe,Zhang, Xuan,&Ju, Tao.(2018).Identification of the Structures and Sources of Shockley-Type In-Grown Stacking Faults in 4H-SiC Epilayers.CRYSTAL RESEARCH AND TECHNOLOGY. |
| MLA | Zhang, Bao-Shun,et al."Identification of the Structures and Sources of Shockley-Type In-Grown Stacking Faults in 4H-SiC Epilayers".CRYSTAL RESEARCH AND TECHNOLOGY (2018). |
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