Unidirectional threshold switching in Ag/Si-based electrochemical metallization cells for high-density bipolar RRAM applications
文献类型：期刊论文
| 作者 | Zeng, Zhongming(曾中明) ; Wang, Chao(王超); Song, Bing; Li, Qingjiang
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| 刊名 | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
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| 出版日期 | 2018 |
| 其他题名 | Unidirectional threshold switching in Ag/Si-based electrochemical metallization cells for high-density bipolar RRAM applications |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/6250]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
| 作者单位 | 中国科学院苏州纳米技术与纳米仿生研究所 |
| 推荐引用方式 GB/T 7714 | Zeng, Zhongming,Wang, Chao,Song, Bing,et al. Unidirectional threshold switching in Ag/Si-based electrochemical metallization cells for high-density bipolar RRAM applications[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2018. |
| APA | Zeng, Zhongming,Wang, Chao,Song, Bing,&Li, Qingjiang.(2018).Unidirectional threshold switching in Ag/Si-based electrochemical metallization cells for high-density bipolar RRAM applications.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING. |
| MLA | Zeng, Zhongming,et al."Unidirectional threshold switching in Ag/Si-based electrochemical metallization cells for high-density bipolar RRAM applications".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2018). |
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