中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Fabrication of high aspect ratio gallium nitride nanostructures by photochemical etching for enhanced photocurrent and photoluminescence property

文献类型:期刊论文

作者Zhang, Miao-Rong; Pan, Ge-Bo(潘革波); Wang, Zu-Gang(王祖刚); Hou, Fei(侯飞); Jiang, Qing-Mei(江清妹)
刊名SCRIPTA MATERIALIA
出版日期2018
其他题名Fabrication of high aspect ratio gallium nitride nanostructures by photochemical etching for enhanced photocurrent and photoluminescence property
语种英语
源URL[http://ir.sinano.ac.cn/handle/332007/6261]  
专题苏州纳米技术与纳米仿生研究所_学科交叉综合研究部_潘革波团队
作者单位中国科学院苏州纳米技术与纳米仿生研究所
推荐引用方式
GB/T 7714
Zhang, Miao-Rong,Pan, Ge-Bo,Wang, Zu-Gang,et al. Fabrication of high aspect ratio gallium nitride nanostructures by photochemical etching for enhanced photocurrent and photoluminescence property[J]. SCRIPTA MATERIALIA,2018.
APA Zhang, Miao-Rong,Pan, Ge-Bo,Wang, Zu-Gang,Hou, Fei,&Jiang, Qing-Mei.(2018).Fabrication of high aspect ratio gallium nitride nanostructures by photochemical etching for enhanced photocurrent and photoluminescence property.SCRIPTA MATERIALIA.
MLA Zhang, Miao-Rong,et al."Fabrication of high aspect ratio gallium nitride nanostructures by photochemical etching for enhanced photocurrent and photoluminescence property".SCRIPTA MATERIALIA (2018).

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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