Fabrication of high aspect ratio gallium nitride nanostructures by photochemical etching for enhanced photocurrent and photoluminescence property
文献类型:期刊论文
作者 | Zhang, Miao-Rong; Pan, Ge-Bo(潘革波); Wang, Zu-Gang(王祖刚); Hou, Fei(侯飞); Jiang, Qing-Mei(江清妹) |
刊名 | SCRIPTA MATERIALIA
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出版日期 | 2018 |
其他题名 | Fabrication of high aspect ratio gallium nitride nanostructures by photochemical etching for enhanced photocurrent and photoluminescence property |
语种 | 英语 |
源URL | [http://ir.sinano.ac.cn/handle/332007/6261] ![]() |
专题 | 苏州纳米技术与纳米仿生研究所_学科交叉综合研究部_潘革波团队 |
作者单位 | 中国科学院苏州纳米技术与纳米仿生研究所 |
推荐引用方式 GB/T 7714 | Zhang, Miao-Rong,Pan, Ge-Bo,Wang, Zu-Gang,et al. Fabrication of high aspect ratio gallium nitride nanostructures by photochemical etching for enhanced photocurrent and photoluminescence property[J]. SCRIPTA MATERIALIA,2018. |
APA | Zhang, Miao-Rong,Pan, Ge-Bo,Wang, Zu-Gang,Hou, Fei,&Jiang, Qing-Mei.(2018).Fabrication of high aspect ratio gallium nitride nanostructures by photochemical etching for enhanced photocurrent and photoluminescence property.SCRIPTA MATERIALIA. |
MLA | Zhang, Miao-Rong,et al."Fabrication of high aspect ratio gallium nitride nanostructures by photochemical etching for enhanced photocurrent and photoluminescence property".SCRIPTA MATERIALIA (2018). |
入库方式: OAI收割
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