中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures

文献类型:期刊论文

作者Zhu, Youhua; Tan, Shuxin; Zhang, Jicai(张纪才); Chen, Gang; Egawa, Takashi; Luo, Xiangdong; Sun, Ling
刊名NANOSCALE RESEARCH LETTERS
出版日期2018
其他题名Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures
语种英语
源URL[http://ir.sinano.ac.cn/handle/332007/6296]  
专题苏州纳米技术与纳米仿生研究所_测试分析平台
作者单位中国科学院苏州纳米技术与纳米仿生研究所
推荐引用方式
GB/T 7714
Zhu, Youhua,Tan, Shuxin,Zhang, Jicai,et al. Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures[J]. NANOSCALE RESEARCH LETTERS,2018.
APA Zhu, Youhua.,Tan, Shuxin.,Zhang, Jicai.,Chen, Gang.,Egawa, Takashi.,...&Sun, Ling.(2018).Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures.NANOSCALE RESEARCH LETTERS.
MLA Zhu, Youhua,et al."Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures".NANOSCALE RESEARCH LETTERS (2018).

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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