Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN
文献类型：期刊论文
| 作者 | Du, Guotong; Li, Mo; Zhang, Yuantao; Liang, Feng; Zhao, Degang; Jiang, Desheng; Liu, Zongshun; Zhu, Jianjun; Chen, Ping; Yang, Jing
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| 刊名 | NANOMATERIALS
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| 出版日期 | 2018 |
| 其他题名 | Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/6298]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 作者单位 | 中国科学院苏州纳米技术与纳米仿生研究所 |
| 推荐引用方式 GB/T 7714 | Du, Guotong,Li, Mo,Zhang, Yuantao,et al. Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN[J]. NANOMATERIALS,2018. |
| APA | Du, Guotong.,Li, Mo.,Zhang, Yuantao.,Liang, Feng.,Zhao, Degang.,...&Zhang, Liqun.(2018).Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN.NANOMATERIALS. |
| MLA | Du, Guotong,et al."Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN".NANOMATERIALS (2018). |
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