中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Study on the measurement accuracy of circular transmission line model for low-resistance Ohmic contacts on III-V wide band-gap semiconductors

文献类型:期刊论文

作者Zhang, Liqun(张立群); An Dingsun(丁孙安); Yang, Hui(杨辉); Liu, Tong(刘通); Huang, Rong(黄荣); Li, Fangsen(李坊森); Huang, Zengli(黄增立); Zhang, Jian(张鉴); Liu, Jianping(刘建平); Zhang, Shuming(张书明)
刊名CURRENT APPLIED PHYSICS
出版日期2018
其他题名Study on the measurement accuracy of circular transmission line model for low-resistance Ohmic contacts on III-V wide band-gap semiconductors
语种英语
源URL[http://ir.sinano.ac.cn/handle/332007/6303]  
专题苏州纳米技术与纳米仿生研究所_大科学装置
作者单位中国科学院苏州纳米技术与纳米仿生研究所
推荐引用方式
GB/T 7714
Zhang, Liqun,An Dingsun,Yang, Hui,et al. Study on the measurement accuracy of circular transmission line model for low-resistance Ohmic contacts on III-V wide band-gap semiconductors[J]. CURRENT APPLIED PHYSICS,2018.
APA Zhang, Liqun.,An Dingsun.,Yang, Hui.,Liu, Tong.,Huang, Rong.,...&Zhang, Shuming.(2018).Study on the measurement accuracy of circular transmission line model for low-resistance Ohmic contacts on III-V wide band-gap semiconductors.CURRENT APPLIED PHYSICS.
MLA Zhang, Liqun,et al."Study on the measurement accuracy of circular transmission line model for low-resistance Ohmic contacts on III-V wide band-gap semiconductors".CURRENT APPLIED PHYSICS (2018).

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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