Extension, closure and conversion of in-grown stacking faults in 4H-SiC epilayers
文献类型：期刊论文
| 作者 | Zhang, Xuan; Li, Zhe(李哲); Ju, Tao(鞠涛); Zhang, Bao-Shun(张宝顺); Zhang, Li-Guo(张立国); Zhang, Ze-Hong(张泽洪) |
| 刊名 | Materials Science Forum
 |
| 出版日期 | 2018 |
| 其他题名 | Extension, closure and conversion of in-grown stacking faults in 4H-SiC epilayers |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/6308]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_张宝顺团队 |
| 作者单位 | 中国科学院苏州纳米技术与纳米仿生研究所 |
| 推荐引用方式 GB/T 7714 | Zhang, Xuan,Li, Zhe,Ju, Tao,et al. Extension, closure and conversion of in-grown stacking faults in 4H-SiC epilayers[J]. Materials Science Forum,2018. |
| APA | Zhang, Xuan,Li, Zhe,Ju, Tao,Zhang, Bao-Shun,Zhang, Li-Guo,&Zhang, Ze-Hong.(2018).Extension, closure and conversion of in-grown stacking faults in 4H-SiC epilayers.Materials Science Forum. |
| MLA | Zhang, Xuan,et al."Extension, closure and conversion of in-grown stacking faults in 4H-SiC epilayers".Materials Science Forum (2018). |
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