中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Extension, closure and conversion of in-grown stacking faults in 4H-SiC epilayers

文献类型:期刊论文

作者Zhang, Xuan; Li, Zhe(李哲); Ju, Tao(鞠涛); Zhang, Bao-Shun(张宝顺); Zhang, Li-Guo(张立国); Zhang, Ze-Hong(张泽洪)
刊名Materials Science Forum
出版日期2018
其他题名Extension, closure and conversion of in-grown stacking faults in 4H-SiC epilayers
语种英语
源URL[http://ir.sinano.ac.cn/handle/332007/6308]  
专题苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_张宝顺团队
作者单位中国科学院苏州纳米技术与纳米仿生研究所
推荐引用方式
GB/T 7714
Zhang, Xuan,Li, Zhe,Ju, Tao,et al. Extension, closure and conversion of in-grown stacking faults in 4H-SiC epilayers[J]. Materials Science Forum,2018.
APA Zhang, Xuan,Li, Zhe,Ju, Tao,Zhang, Bao-Shun,Zhang, Li-Guo,&Zhang, Ze-Hong.(2018).Extension, closure and conversion of in-grown stacking faults in 4H-SiC epilayers.Materials Science Forum.
MLA Zhang, Xuan,et al."Extension, closure and conversion of in-grown stacking faults in 4H-SiC epilayers".Materials Science Forum (2018).

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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