Response and Electrical Characteristics of In0.53Ga0.47As/InP Avalanche Photodiode
文献类型：期刊论文
| 作者 | Dai, Pan(代盼); Yang, Wen-Xian(杨文献); Xie, Quan(谢泉); Lu, Shu-Long(陆书龙); Yuan, Zheng-Bing(袁正兵); Xiao, Meng(肖梦); Li, Xue-Fei(李雪飞); Xiao, Qing-Quan(肖清泉); Tan, Ming(谭明); Wu, Yuan-Yuan(吴渊渊) |
| 刊名 | Guangzi Xuebao/Acta Photonica Sinica
 |
| 出版日期 | 2018 |
| 其他题名 | Response and Electrical Characteristics of In0.53Ga0.47As/InP Avalanche Photodiode |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/6315]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队 |
| 作者单位 | 中国科学院苏州纳米技术与纳米仿生研究所 |
| 推荐引用方式 GB/T 7714 | Dai, Pan,Yang, Wen-Xian,Xie, Quan,et al. Response and Electrical Characteristics of In0.53Ga0.47As/InP Avalanche Photodiode[J]. Guangzi Xuebao/Acta Photonica Sinica,2018. |
| APA | Dai, Pan.,Yang, Wen-Xian.,Xie, Quan.,Lu, Shu-Long.,Yuan, Zheng-Bing.,...&Wu, Yuan-Yuan.(2018).Response and Electrical Characteristics of In0.53Ga0.47As/InP Avalanche Photodiode.Guangzi Xuebao/Acta Photonica Sinica. |
| MLA | Dai, Pan,et al."Response and Electrical Characteristics of In0.53Ga0.47As/InP Avalanche Photodiode".Guangzi Xuebao/Acta Photonica Sinica (2018). |
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