中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Fabrication technology of Si face and m face on 4H-SiC (0001) epi-layer based on molten KOH etching

文献类型:期刊论文

作者Sun, Yu-hua(孙玉华); Lin, Wen-kui(林文魁); Zhang, Xuan; Li, Zhe(李哲); Yang, Tao-tao(杨涛涛); Ju, Tao(鞠涛); Zhang, Bao-shun(张宝顺); Zeng, Chun-hong(曾春红)
刊名FOURTH SEMINAR ON NOVEL OPTOELECTRONIC DETECTION TECHNOLOGY AND APPLICATION
出版日期2018
其他题名Fabrication technology of Si face and m face on 4H-SiC (0001) epi-layer based on molten KOH etching
语种英语
源URL[http://ir.sinano.ac.cn/handle/332007/6322]  
专题苏州纳米技术与纳米仿生研究所_纳米加工公共平台
作者单位中国科学院苏州纳米技术与纳米仿生研究所
推荐引用方式
GB/T 7714
Sun, Yu-hua,Lin, Wen-kui,Zhang, Xuan,et al. Fabrication technology of Si face and m face on 4H-SiC (0001) epi-layer based on molten KOH etching[J]. FOURTH SEMINAR ON NOVEL OPTOELECTRONIC DETECTION TECHNOLOGY AND APPLICATION,2018.
APA Sun, Yu-hua.,Lin, Wen-kui.,Zhang, Xuan.,Li, Zhe.,Yang, Tao-tao.,...&Zeng, Chun-hong.(2018).Fabrication technology of Si face and m face on 4H-SiC (0001) epi-layer based on molten KOH etching.FOURTH SEMINAR ON NOVEL OPTOELECTRONIC DETECTION TECHNOLOGY AND APPLICATION.
MLA Sun, Yu-hua,et al."Fabrication technology of Si face and m face on 4H-SiC (0001) epi-layer based on molten KOH etching".FOURTH SEMINAR ON NOVEL OPTOELECTRONIC DETECTION TECHNOLOGY AND APPLICATION (2018).

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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