Kinetics of Domain Switching by Mechanical and Electrical Stimulation in Relaxor-Based Ferroelectrics
文献类型：期刊论文
| 作者 | Chen, Zibin; Hong, Liang; Wang, Feifei2; An, Xianghai; Wang, Xiaolin3; Ringer, Simon4; Chen, Long-Qing; Luo, Haosu5; Liao, Xiaozhou |
| 刊名 | PHYSICAL REVIEW APPLIED
 |
| 出版日期 | 2017 |
| 卷号 | 8期号:6 |
| ISSN号 | 2331-7019 |
| DOI | 10.1103/PhysRevApplied.8.064005 |
| 英文摘要 | Ferroelectric materials have been extensively explored for applications in high-density nonvolatile memory devices because of their ferroelectric-ferroelastic domain-switching behavior under electric loading or mechanical stress. However, the existence of ferroelectric and ferroelastic backswitching would cause significant data loss, which affects the reliability of data storage. Here, we apply in situ transmission electron microscopy and phase-field modeling to explore the unique ferroelastic domain-switching kinetics and the origin of this in relaxor-based Pb(Mg1/3Nb2/3)O-3-33%PbTiO3 single-crystal pillars under electrical and mechanical stimulations. Results showed that the electric-mechanical hysteresis loop shifted for relaxor-based single-crystal pillars because of the low energy levels of domains in the material and the constraint on the pillars, resulting in various mechanically reversible and irreversible domain-switching states. The phenomenon can potentially be used for advanced bit writing and reading in nonvolatile memories, which effectively overcomes the backswitching problem and broadens the types of ferroelectric materials for nonvolatile memory applications. |
| WOS记录号 | WOS:000417133600002 |
| 源URL | [http://ir.sic.ac.cn/handle/331005/26620]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 作者单位 | 1.Univ Sydney, Sch Aerosp Mech & Mechatron Engn, Sydney, NSW 2006, Australia 2.Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA 3.Shanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China 4.Univ Wollongong, Fac Engn, Australian Inst Innovat Mat, Inst Superconducting & Elect Mat, Wollongong, NSW 2522, Australia 5.Univ Sydney, Australian Inst Nanoscale Sci & Technol, Sydney, NSW 2006, Australia 6.Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, Zibin,Hong, Liang,Wang, Feifei,et al. Kinetics of Domain Switching by Mechanical and Electrical Stimulation in Relaxor-Based Ferroelectrics[J]. PHYSICAL REVIEW APPLIED,2017,8(6). |
| APA | Chen, Zibin.,Hong, Liang.,Wang, Feifei.,An, Xianghai.,Wang, Xiaolin.,...&Liao, Xiaozhou.(2017).Kinetics of Domain Switching by Mechanical and Electrical Stimulation in Relaxor-Based Ferroelectrics.PHYSICAL REVIEW APPLIED,8(6). |
| MLA | Chen, Zibin,et al."Kinetics of Domain Switching by Mechanical and Electrical Stimulation in Relaxor-Based Ferroelectrics".PHYSICAL REVIEW APPLIED 8.6(2017). |
入库方式： OAI收割
来源：上海硅酸盐研究所
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