Effect of carbon on boron diffusion and clustering in silicon: Temperature dependence study
文献类型：期刊论文
| 作者 | Nagai, Y.; Tu, Y.; Shimizu, Y.; Kunimune, Y.; Shimada, Y.; Katayama, T.; Ide, T.; Inoue, M.; Yano, F.; Inoue, K. |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2018 |
| 文献子类 | 期刊论文 |
| 英文摘要 | Atom probe tomography and secondary ion mass spectrometry were used to investigate the effects of carbon (C) co-implantation and subsequent annealing at 600 to 1200 degrees C on the behavior of implanted boron (B) atoms in silicon. When B alone was implanted, annealing at 600 to 800 degrees C caused it to form clusters in the peak region (1020 cm(-3)) of the concentration profile, and diffusion only occurred in the low-concentration tail region (< 10(18) cm(-3)), which is thought to be the well-known transient enhanced diffusion. However, when co-implantation with C was performed, this diffusion was almost completely suppressed in the same annealing temperature range. In the absence of C implantation, annealing at 1000 degrees C caused B clusters to begin to dissolve and B to diffuse out of the peak concentration region. However, this diffusion was also suppressed by C implantation because C atoms trapped B atoms in the kink region found at the B concentration level of 2 x 10(19) cm(-3). At 1200 degrees C, B clusters were totally dissolved and a strong B diffusion occurred. In contrast to lower annealing temperatures, this diffusion was actually enhanced by C implantation. It is believed that Si interstitials play an important role in the interaction between B and C. This kind of comprehensive investigation yields important information for optimizing ion implantation and annealing processes. Published by AIP Publishing. |
| URL标识 | 查看原文 |
| 语种 | 英语 |
| 源URL | [http://ir.siat.ac.cn:8080/handle/172644/14876]  |
| 专题 | 深圳先进技术研究院_其他 |
| 推荐引用方式 GB/T 7714 | Nagai, Y.,Tu, Y.,Shimizu, Y.,et al. Effect of carbon on boron diffusion and clustering in silicon: Temperature dependence study[J]. JOURNAL OF APPLIED PHYSICS,2018. |
| APA | Nagai, Y..,Tu, Y..,Shimizu, Y..,Kunimune, Y..,Shimada, Y..,...&Inoue, K..(2018).Effect of carbon on boron diffusion and clustering in silicon: Temperature dependence study.JOURNAL OF APPLIED PHYSICS. |
| MLA | Nagai, Y.,et al."Effect of carbon on boron diffusion and clustering in silicon: Temperature dependence study".JOURNAL OF APPLIED PHYSICS (2018). |
入库方式： OAI收割
来源：深圳先进技术研究院
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