Spectral and electrical properties of 3 MeV and 10 MeV proton irradiated InGaAsP single junction solar cell
文献类型：期刊论文
| 作者 | Xu, Y (Xu, Yan)[ 1,2 ]; Heini, M (Heini, Maliya)[ 2 ]; Shen, XB (Shen, Xiaobao)[ 2,3 ]; Aierken, A (Aierken, Abuduwayiti)[ 2,4 ]; Zhao, XF (Zhao, Xiaofan)[ 2 ]; Sailai, M (Sailai, Momin)[ 2 ]; Lu, W (Lu, Wu)[ 2 ] ; Tan, M (Tan, Ming)[ 5 ]; Wu, YY (Wu, Yuanyuan)[ 5 ]; Lu, SL (Lu, Shulong)[ 5 ]
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| 刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS
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| 出版日期 | 2019 |
| 卷号 | 58期号:3页码:1-6 |
| ISSN号 | 0021-4922 |
| DOI | 10.7567/1347-4065/aafd19 |
| 英文摘要 | 3 MeV and 10 MeV proton irradiated InGaAsP single junction solar cell have been investigated. Proton fluences are calculated by MUSALISS software based on the equivalent displacement damage method. SRIM simulation is used to analyze the irradiation damage. The result shows that the external quantum efficiency (EQE) and electrical parameters of the solar cell are degraded by both 3 MeV and 10 MeV proton irradiation. The degradation of EQE is larger in the longer wavelength region because of the higher probability of carrier lifetime reduction in the base region of the solar cell, and the 3 MeV proton produced more degradation of the electrical parameters of the solar cell than that of 10 MeV proton irradiation under the same displacement damage dose. (C) 2019 The Japan Society of Applied Physics |
| WOS记录号 | WOS:000459885400001 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/5685]  |
| 专题 | 新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室 新疆理化技术研究所_材料物理与化学研究室 |
| 作者单位 | 1.Xinjiang Univ, Sch Phys & Technol, Urumqi 830046, Peoples R China 2.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Device Special Environm, 40-1 South Beijing Rd, Urumqi 830011, Peoples R China 3.Univ Chinese Acad Sci, 19-A Yuquan Rd, Beijing 100049, Peoples R China 4.Yunnan Normal Univ, Sch Energy & Environm, 756 Juxian Rd, Kunming 650500, Yunnan, Peoples R China 5.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou Ind Pk,Ruoshui Rd 398, Suzhou 215123, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xu, Y ,Heini, M ,Shen, XB ,et al. Spectral and electrical properties of 3 MeV and 10 MeV proton irradiated InGaAsP single junction solar cell[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2019,58(3):1-6. |
| APA | Xu, Y .,Heini, M .,Shen, XB .,Aierken, A .,Zhao, XF .,...&Guo, Q .(2019).Spectral and electrical properties of 3 MeV and 10 MeV proton irradiated InGaAsP single junction solar cell.JAPANESE JOURNAL OF APPLIED PHYSICS,58(3),1-6. |
| MLA | Xu, Y ,et al."Spectral and electrical properties of 3 MeV and 10 MeV proton irradiated InGaAsP single junction solar cell".JAPANESE JOURNAL OF APPLIED PHYSICS 58.3(2019):1-6. |
入库方式： OAI收割
来源：新疆理化技术研究所
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