Facile in situ growth of photoactive,beta-Bi2O3 films
文献类型：期刊论文
| 作者 | Wang, Yi1 ; Long, Yang1,2; Zhang, Dun1
|
| 刊名 | JOURNAL OF THE TAIWAN INSTITUTE OF CHEMICAL ENGINEERS
 |
| 出版日期 | 2017-06-01 |
| 卷号 | 75页码:183-188 |
| 关键词 | Bi2o3 Semiconductors Films In Situ Growth Calcination Photoactive |
| DOI | 10.1016/j.jtice.2017.03.037 |
| 文献子类 | Article |
| 英文摘要 | Photoactive beta-Bi2O3 films with oriented microstructure are fabricated by calcination of basic bismuth nitrate precursor films on the Cu surface synthesized using in situ growth method. The crystal structure and morphology can be tailored by controlling the calcination temperature. The,beta-Bi2O3 film heated at 550 degrees C has a stable highest photoinduced current density of 0.35 mA/cm(2) at a -0.40 V applied bias versus Ag/Agcl and excellent cyclic stability. This long-term stability of the beta-Bi2O3 film is benefiting from its chemical and crystal stability. Therefore, beta-Bi2O3 films fabricated using this strategy have great potential use of energy conversion, environment protection and biofouling control. (C) 2017 Taiwan Institute of Chemical Engineers. Published by Elsevier B.V. All rights reserved. |
| 语种 | 英语 |
| WOS记录号 | WOS:000405879600021 |
| 版本 | 出版稿 |
| 源URL | [http://ir.qdio.ac.cn/handle/337002/137073]  |
| 专题 | 海洋研究所_海洋腐蚀与防护研究发展中心 |
| 作者单位 | 1.Chinese Acad Sci, Inst Oceanol, Key Lab Marine Environm Corros & Biofouling, Qingdao, Peoples R China 2.Univ Chinese Acad Sci, Beijing, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Yi,Long, Yang,Zhang, Dun. Facile in situ growth of photoactive,beta-Bi2O3 films[J]. JOURNAL OF THE TAIWAN INSTITUTE OF CHEMICAL ENGINEERS,2017,75:183-188. |
| APA | Wang, Yi,Long, Yang,&Zhang, Dun.(2017).Facile in situ growth of photoactive,beta-Bi2O3 films.JOURNAL OF THE TAIWAN INSTITUTE OF CHEMICAL ENGINEERS,75,183-188. |
| MLA | Wang, Yi,et al."Facile in situ growth of photoactive,beta-Bi2O3 films".JOURNAL OF THE TAIWAN INSTITUTE OF CHEMICAL ENGINEERS 75(2017):183-188. |
入库方式： OAI收割
来源：海洋研究所
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