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Giant defect-induced effects on nanoscale charge separation in semiconductor photocatalysts

文献类型:期刊论文

作者Chen, Ruotian1,2; Pang, Shan1; An, Hongyu1; Dittrich, Thomas3; Fan, Fengtao1; Li, Can1
刊名Nano letters
出版日期2019
卷号19期号:1页码:426-432
关键词Defect Photocatalysis Solar energy conversion Charge separation Surface photovoltage
ISSN号1530-6984
DOI10.1021/acs.nanolett.8b04245
通讯作者Dittrich, thomas(dittrich@helmholtz-berlin.de) ; Fan, fengtao(ftfan@dicp.ac.cn) ; Li, can(canli@dicp.ac.cn)
英文摘要Defects can markedly impact the performance of semiconductor-based photocatalysts, where the spatial separation of photo generated charges is required for converting solar energy into fuels. however, understanding exactly how defects affect photogenerated charge separation at nanometer scale remains quite challenging. here, using time and space-resolved surface photovoltage approaches, we demonstrate that the distribution of surface photogenerated charges and the direction of photogenerated charge separation are determined by the defects distributed within a 100 nm surface region of a photocatalytic cu2o particle. this is enabled by the defect-induced charge separation process, arising from the trapping of electrons at the near-surface defect states and the accumulation of holes at the surface states. more importantly, the driving force for defect-induced charge separation is greater than 4.2 kv/cm and can be used to drive photocatalytic reactions. these findings highlight the importance of near-surface defect engineering in promoting photogenerated charge separation and manipulating surface photogenerated charges; further, they open up a powerful avenue for improving photocatalytic charge separation and solar energy conversion efficiency.
WOS关键词CARRIER DYNAMICS ; CUPROUS-OXIDE ; SURFACE ; EFFICIENCY ; NANOSTRUCTURES ; ENHANCEMENT ; STATES ; CUO ; XPS
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
语种英语
WOS记录号WOS:000455561300054
出版者AMER CHEMICAL SOC
URI标识http://www.irgrid.ac.cn/handle/1471x/2372898
专题大连化学物理研究所
通讯作者Dittrich, Thomas; Fan, Fengtao; Li, Can
作者单位1.Chinese Acad Sci, Collaborat Innovat Ctr Chem Energy Mat IChEM, Dalian Natl Lab Clean Energy, State Key Lab Catalysis,Dalian Inst Chem Phys, Zhongshan Rd 457, Dalian 116023, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
3.Helmholtz Zentrum Berlin Mat & Energie GmbH, Inst Silizium Photovolta, Kekulestr 5, D-12489 Berlin, Germany
推荐引用方式
GB/T 7714
Chen, Ruotian,Pang, Shan,An, Hongyu,et al. Giant defect-induced effects on nanoscale charge separation in semiconductor photocatalysts[J]. Nano letters,2019,19(1):426-432.
APA Chen, Ruotian,Pang, Shan,An, Hongyu,Dittrich, Thomas,Fan, Fengtao,&Li, Can.(2019).Giant defect-induced effects on nanoscale charge separation in semiconductor photocatalysts.Nano letters,19(1),426-432.
MLA Chen, Ruotian,et al."Giant defect-induced effects on nanoscale charge separation in semiconductor photocatalysts".Nano letters 19.1(2019):426-432.

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来源:大连化学物理研究所

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