Highly sensitive and ultrafast deep uv photodetector based on a β-ga2o3 nanowire network grown by cvd
文献类型：期刊论文
| 作者 | Du,Jianyu1,2; Xing,Jie1; Ge,Chen2; Liu,Hao1; Liu,Pengyu1; Hao,Huiying1; Dong,Jingjing1; Zheng,Zhiyuan1; Gao,Hua1 |
| 刊名 | Journal of physics d: applied physics
 |
| 出版日期 | 2016-09-27 |
| 卷号 | 49期号:42 |
| 关键词 | β-ga2o3 Nanowire Solar-blind ultraviolet detector |
| ISSN号 | 0022-3727 |
| DOI | 10.1088/0022-3727/49/42/425105 |
| 英文摘要 | Abstract we investigated a high-performance deep ultraviolet photodetector based on a β-gallium oxide (β-ga2o3) nanowire network. β-ga2o3 nanowires were grown at different temperatures by a chemical vapor deposition method. x-ray diffraction, scanning electron microscopy, transmission electron microscopy and energy dispersive spectrum analysis were utilized to characterize the structure and morphology. with increasing the temperature, the nanowires became thicker and their surface appeared more rough with many kinks and branch-like shapes. it is proposed that the growth mechanism is dominated by a combination of vapor–liquid–solid and vapor–solid growth. a photodetector based on the best quality β-ga2o3 nanowire network was fabricated by a simple and cheap mask method, which exhibited excellent photoelectric performance. the responsive spectrum presented a peak response located at 231?nm with a sharp cutoff at 270?nm. the response rejection ratio of i231 nm/i290 nm is more than three orders of magnitude, demonstrating an intrinsic solar-blindness. the full width at half maximum of the response curve is only 1.2 ns under pulsed laser irradiation. the high sensitivity, superior selectivity, ultrafast response speed and simple fabrication technology show that the β-ga2o3 nanowire network has promising application in solar-blind photodetectors. |
| 语种 | 英语 |
| WOS记录号 | IOP:0022-3727-49-42-425105 |
| 出版者 | IOP Publishing |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2373522 |
| 专题 | 物理研究所 |
| 作者单位 | 1.School of Science, China University of Geosciences, Beijing 100083, People’s Republic of China 2.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China |
| 推荐引用方式 GB/T 7714 | Du,Jianyu,Xing,Jie,Ge,Chen,et al. Highly sensitive and ultrafast deep uv photodetector based on a β-ga2o3 nanowire network grown by cvd[J]. Journal of physics d: applied physics,2016,49(42). |
| APA | Du,Jianyu.,Xing,Jie.,Ge,Chen.,Liu,Hao.,Liu,Pengyu.,...&Gao,Hua.(2016).Highly sensitive and ultrafast deep uv photodetector based on a β-ga2o3 nanowire network grown by cvd.Journal of physics d: applied physics,49(42). |
| MLA | Du,Jianyu,et al."Highly sensitive and ultrafast deep uv photodetector based on a β-ga2o3 nanowire network grown by cvd".Journal of physics d: applied physics 49.42(2016). |
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