Two-dimensional wide-band-gap ii–v semiconductors with a dilated graphene-like structure
文献类型：期刊论文
| 作者 | Zhang,Xue-Jing1,2; Liu,Bang-Gui1,2 |
| 刊名 | Semiconductor science and technology
 |
| 出版日期 | 2016-10-28 |
| 卷号 | 31期号:12 |
| 关键词 | Two-dimensional semiconductor Wide band gap First-principles calculation 68.65.-k 73.22.-f 78.67.-n |
| ISSN号 | 0268-1242 |
| DOI | 10.1088/0268-1242/31/12/125002 |
| 英文摘要 | Abstract since the advent of graphene, two-dimensional (2d) materials have become very attractive and there is growing interest in exploring new 2d materials beyond graphene. here, through density-functional theory (dft) calculations, we predict 2d wide-band-gap ii–v semiconductor materials of m3x2 (m = zn, cd and x = n, p, as) with a dilated graphene-like honeycomb structure. in this structure the group-v x atoms form two x-atomic planes symmetrically astride the centering group-iib m atomic plane. our dft calculation shows that 2d zn3n2, zn3p2 and zn3as2 have direct band gaps of 2.87, 3.81 and 3.55 ev, respectively, and 2d cd3n2, cd3p2 and cd3as2 exhibit indirect band gaps of 2.74, 3.51 and 3.29 ev, respectively. each of the six 2d materials is shown to have effective carrier (either hole or electron) masses down to 0.03m0–0.05m0. the structural stability and feasibility of experimental realization of these 2d materials has been shown in terms of dft phonon spectra and total energy comparison with related existing bulk materials. on the experimental side, there already are many similar two-coordinate structures of zn and other transition metals in various organic materials. therefore, these 2d semiconductors can enrich the family of 2d electronic materials and may have promising potential for achieving novel transistors and optoelectronic devices. |
| 语种 | 英语 |
| WOS记录号 | IOP:0268-1242-31-12-125002 |
| 出版者 | IOP Publishing |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2373530 |
| 专题 | 物理研究所 |
| 作者单位 | 1.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China 2.School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People’s Republic of China |
| 推荐引用方式 GB/T 7714 | Zhang,Xue-Jing,Liu,Bang-Gui. Two-dimensional wide-band-gap ii–v semiconductors with a dilated graphene-like structure[J]. Semiconductor science and technology,2016,31(12). |
| APA | Zhang,Xue-Jing,&Liu,Bang-Gui.(2016).Two-dimensional wide-band-gap ii–v semiconductors with a dilated graphene-like structure.Semiconductor science and technology,31(12). |
| MLA | Zhang,Xue-Jing,et al."Two-dimensional wide-band-gap ii–v semiconductors with a dilated graphene-like structure".Semiconductor science and technology 31.12(2016). |
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来源：物理研究所
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