Snse2 field-effect transistor with high on/off ratio and polarity-switchable photoconductivity
文献类型：期刊论文
| 作者 | Xu,Hong1,2; Xing,Jie1; Huang,Yuan2; Ge,Chen2; Lu,Jinghao1; Han,Xu1; Du,Jianyu2; Hao,Huiying1; Dong,Jingjing1; Liu,Hao1 |
| 刊名 | Nanoscale research letters
 |
| 出版日期 | 2019-01-09 |
| 卷号 | 14期号:1 |
| ISSN号 | 1931-7573 |
| 关键词 | Field-effect transistor Snse2 Photoconductivity On/off ratio |
| DOI | 10.1186/s11671-019-2850-0 |
| 通讯作者 | Xing,jie(xingjie@cugb.edu.cn) ; Huang,yuan(yhuang01@iphy.ac.cn) |
| 英文摘要 | Abstractsnse2 field-effect transistor was fabricated based on exfoliated few-layered snse2 flake, and its electrical and photoelectric properties have been investigated in detail. with the help of a drop of de-ionized (di) water, the snse2 fet can achieve an on/off ratio as high as ~?104 within 1?v bias, which is ever extremely difficult for snse2 due to its ultrahigh carrier density (1018/cm3). moreover, the subthreshold swing and mobility are both improved to ～?62?mv/decade and ~?127?cm2?v?1?s?1 at 300?k, which results from the efficient screening by the liquid dielectric gate. interestingly, the snse2 fet exhibits a gate bias-dependent photoconductivity, in which a competition between the carrier concentration and the mobility under illumination plays a key role in determining the polarity of photoconductivity. |
| 语种 | 英语 |
| 出版者 | Springer US |
| WOS记录号 | BMC:10.1186/S11671-019-2850-0 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2373540 |
| 专题 | 物理研究所 |
| 通讯作者 | Xing,Jie; Huang,Yuan |
| 作者单位 | 1. 2. |
| 推荐引用方式 GB/T 7714 | Xu,Hong,Xing,Jie,Huang,Yuan,et al. Snse2 field-effect transistor with high on/off ratio and polarity-switchable photoconductivity[J]. Nanoscale research letters,2019,14(1). |
| APA | Xu,Hong.,Xing,Jie.,Huang,Yuan.,Ge,Chen.,Lu,Jinghao.,...&Liu,Hao.(2019).Snse2 field-effect transistor with high on/off ratio and polarity-switchable photoconductivity.Nanoscale research letters,14(1). |
| MLA | Xu,Hong,et al."Snse2 field-effect transistor with high on/off ratio and polarity-switchable photoconductivity".Nanoscale research letters 14.1(2019). |
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来源：物理研究所
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