Intersubband absorption properties of high al content alxga1?xn/gan multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition
文献类型：期刊论文
| 作者 | Sun,He Hui1; Guo,Feng Yun1; Li,Deng Yue1; Wang,Lu2; Wang,Dong Bo1; Zhao,Lian Cheng1 |
| 刊名 | Nanoscale research letters
 |
| 出版日期 | 2012-11-26 |
| 卷号 | 7期号:1 |
| 关键词 | Quantum wells Interface Intersubband Tem Pacs 61.72.lk 61.05.cp 68.37.-d 61.72.uj |
| ISSN号 | 1556-276X |
| DOI | 10.1186/1556-276x-7-649 |
| 通讯作者 | Sun,he hui(hh_sun@live.cn) |
| 英文摘要 | Abstracthigh al content alxga1?xn/gan multiple quantum well (mqw) films with different interlayers were grown by metal organic chemical vapor deposition. these mqws were designed to achieve intersubband (isb) absorption in the mid-infrared spectral range. we have considered two growth conditions, with algan interlayer and gan/aln superlattice (sl) interlayer, both deposited on gan-on-sapphire templates. atomic force microscopy images show a relatively rough surface with atomic-step terraces and surface depression, mainly dominated by dislocations. high-resolution x-ray diffraction and transmission electron microscopy analyses indicate that good crystalline quality of the algan/gan mqw layer could be achieved when the algan interlayer is inserted. the isb absorption with a peak at 3.7 μm was demonstrated in mqw films with algan interlayer. however, we have not observed the infrared absorption in mqw films with gan/aln sl interlayer. it is believed that the high dislocation density and weaker polarization that resulted from the rough interface are determinant factors of vanished isb absorption for mqw films with the gan/aln sl interlayer. |
| 语种 | 英语 |
| WOS记录号 | BMC:10.1186/1556-276X-7-649 |
| 出版者 | Springer New York |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2373542 |
| 专题 | 物理研究所 |
| 通讯作者 | Sun,He Hui |
| 作者单位 | 1.Harbin Institute of Technology; Department of Information Materials Science and Technology 2.Chinese Academy of Sciences; Renewable Energy Laboratory, Institute of Physics |
| 推荐引用方式 GB/T 7714 | Sun,He Hui,Guo,Feng Yun,Li,Deng Yue,et al. Intersubband absorption properties of high al content alxga1?xn/gan multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition[J]. Nanoscale research letters,2012,7(1). |
| APA | Sun,He Hui,Guo,Feng Yun,Li,Deng Yue,Wang,Lu,Wang,Dong Bo,&Zhao,Lian Cheng.(2012).Intersubband absorption properties of high al content alxga1?xn/gan multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition.Nanoscale research letters,7(1). |
| MLA | Sun,He Hui,et al."Intersubband absorption properties of high al content alxga1?xn/gan multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition".Nanoscale research letters 7.1(2012). |
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来源：物理研究所
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