Molecular beam epitaxy growth of peak wavelength-controlled ingaas/algaas quantum wells for 4.3-μm mid-wavelength infrared detection
文献类型：期刊论文
| 作者 | Shi,Zhenwu1; Wang,Lu1; Zhen,Honglou2; Wang,Wenxin1; Chen,Hong1 |
| 刊名 | Nanoscale research letters
 |
| 出版日期 | 2013-07-03 |
| 卷号 | 8期号:1 |
| 关键词 | Molecular beam epitaxy Quantum well infrared detector Ingaas/algaas quantum well |
| ISSN号 | 1556-276X |
| DOI | 10.1186/1556-276x-8-310 |
| 通讯作者 | Wang,lu(lwang@iphy.ac.cn) ; Zhen,honglou(hlzhen@mail.sitp.ac.cn) |
| 英文摘要 | Abstractingaas/algaas multiple quantum wells used for 4.3 μm mid-wavelength infrared quantum well infrared detectors were grown by molecular beam epitaxy. in composition loss was observed and quantitatively studied by high-resolution x-ray diffraction technology. by this in composition loss effect, the energy band engineering on the photo-response wavelength is not easily achieved. a thin algaas barrier grown at low temperature is used to suppress the in atom desorption, and this growth process was verified to be able to adjust the photo-response wavelength as designed by energy band engineering in the photocurrent spectrum. |
| 语种 | 英语 |
| WOS记录号 | BMC:10.1186/1556-276X-8-310 |
| 出版者 | Springer New York |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2373544 |
| 专题 | 物理研究所 |
| 通讯作者 | Wang,Lu; Zhen,Honglou |
| 作者单位 | 1.Chinese Academy of Sciences; Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, National Laboratory for Condensed Matter Physics, Institute of Physics 2.Chinese Academy of Sciences; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics |
| 推荐引用方式 GB/T 7714 | Shi,Zhenwu,Wang,Lu,Zhen,Honglou,et al. Molecular beam epitaxy growth of peak wavelength-controlled ingaas/algaas quantum wells for 4.3-μm mid-wavelength infrared detection[J]. Nanoscale research letters,2013,8(1). |
| APA | Shi,Zhenwu,Wang,Lu,Zhen,Honglou,Wang,Wenxin,&Chen,Hong.(2013).Molecular beam epitaxy growth of peak wavelength-controlled ingaas/algaas quantum wells for 4.3-μm mid-wavelength infrared detection.Nanoscale research letters,8(1). |
| MLA | Shi,Zhenwu,et al."Molecular beam epitaxy growth of peak wavelength-controlled ingaas/algaas quantum wells for 4.3-μm mid-wavelength infrared detection".Nanoscale research letters 8.1(2013). |
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