Uncooled eusbte3 photodetector highly sensitive from ultraviolet to terahertz frequencies
文献类型：期刊论文
| 作者 | Niu,Ying Y1; Wu,Dong1,5; Su,Yu Q1; Zhu,Hai1; Wang,Biao1; Wang,Ying X2; Zhao,Zi R2; Zheng,Ping3; Niu,Jia S4; Zhou,Hui B4 |
| 刊名 | 2d materials
 |
| 出版日期 | 2017-11-10 |
| 卷号 | 5期号:1 |
| 关键词 | Photodetector Photosensitive material Ultrabroadband photodetection Terahertz detection Polytelluride |
| ISSN号 | 2053-1583 |
| DOI | 10.1088/2053-1583/aa939c |
| 英文摘要 | Abstract light probe from uv to thz is critical in photoelectronics and has great applications ranging from imaging, communication to medicine (woodward et al 2002 phys. med. biol. 47 3853–63; pospischil et al 2013 nat. photon. 7 892–6; martyniuk and rogalski 2003 prog. quantum electron. 27 59–210). however, the room temperature ultrabroadband photodetection across visible down to far-infrared is still challenging. the challenging arises mainly from the lack of suitable photoactive materials. because that conventional semiconductors, such as silicon, have their photosensitive properties cut off by the bandgap and are transparent to spectrum at long-wavelength infrared side (ciupa and rogalski 1997 opto-electron. rev. 5 257–66; tonouchi 2007 nat. photon. 1 97–105; sizov and rogalski 2010 prog. quantum electron. 34 278–347; kinch 2000 j. electron. mater. 29 809–17). comparatively, the dielectrics with very narrow band-gap but maintain the semiconductor-like electrical conduction would have priorities for ultrabroadband photodetection. here we report on eusbte3 is highly sensitive from ultraviolet directly to terahertz (thz) at room temperature. high photoresponsivities 1–8 a w?1 reached in our prototype eusbte3 detectors with low noise equivalent power (nep) recorded, for instances ~150 pw · hz?1/2 (at λ??=??532?nm) and ~0.6 nw · hz?1/2 (at λ??=??118.8 μm) respectively. our results demonstrate a promising system with direct photosensitivity extending well into thz regime at room temperature, shed new light on exploring more sophisticated multi-band photoelectronics. |
| 语种 | 英语 |
| WOS记录号 | IOP:2053-1583-5-1-AA939C |
| 出版者 | IOP Publishing |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2373548 |
| 专题 | 物理研究所 |
| 作者单位 | 1.School of Physics, Sun Yat-Sen University, Guangzhou 510275, People’s Republic of China 2.Key Laboratory of Particle & Radiation Imaging (Tsinghua University), Ministry of Education, Department of Engineering Physics, Tsinghua University, Beijing 100084, People’s Republic of China 3.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China 4.International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People’s Republic of China 5.Author to whom any correspondence should be addressed. |
| 推荐引用方式 GB/T 7714 | Niu,Ying Y,Wu,Dong,Su,Yu Q,et al. Uncooled eusbte3 photodetector highly sensitive from ultraviolet to terahertz frequencies[J]. 2d materials,2017,5(1). |
| APA | Niu,Ying Y.,Wu,Dong.,Su,Yu Q.,Zhu,Hai.,Wang,Biao.,...&Wang,Nan L.(2017).Uncooled eusbte3 photodetector highly sensitive from ultraviolet to terahertz frequencies.2d materials,5(1). |
| MLA | Niu,Ying Y,et al."Uncooled eusbte3 photodetector highly sensitive from ultraviolet to terahertz frequencies".2d materials 5.1(2017). |
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