Vertical interface induced dielectric relaxation in nanocomposite (batio3)(1-x):(sm2o3)(x) thin films
文献类型：期刊论文
| 作者 | Li, Weiwei1,2; Zhang, Wei2; Wang, Le3,4; Gu, Junxing3,4; Chen, Aiping5; Zhao, Run2; Liang, Yan2; Guo, Haizhong3,4; Tang, Rujun2; Wang, Chunchang6 |
| 刊名 | Scientific reports
 |
| 出版日期 | 2015-06-10 |
| 卷号 | 5页码:8 |
| ISSN号 | 2045-2322 |
| DOI | 10.1038/srep11335 |
| 通讯作者 | Yang, hao(yanghao@nuaa.edu.cn) |
| 英文摘要 | Vertical interfaces in vertically aligned nanocomposite thin films have been approved to be an effective method to manipulate functionalities. however, several challenges with regard to the understanding on the physical process underlying the manipulation still remain. in this work, because of the ordered interfaces and large interfacial area, heteroepitaxial (batio3)(1-x):(sm2o3)(x) thin films have been fabricated and used as a model system to investigate the relationship between vertical interfaces and dielectric properties. due to a relatively large strain generated at the interfaces, vertical interfaces between batio3 and sm2o3 are revealed to become the sinks to attract oxygen vacancies. the movement of oxygen vacancies is confined at the interfaces and hampered by the misfit dislocations, which contributed to a relaxation behavior in (batio3)(1-x):(sm2o3)(x) thin films. this work represents an approach to further understand that how interfaces influence on dielectric properties in oxide thin films. |
| WOS关键词 | OXIDE INTERFACE ; STRAIN CONTROL ; TEMPERATURE ; CONDUCTIVITY ; PHASE ; ENHANCEMENT ; DENSITY ; RANGE |
| WOS研究方向 | Science & Technology - Other Topics |
| WOS类目 | Multidisciplinary Sciences |
| 语种 | 英语 |
| WOS记录号 | WOS:000356093300003 |
| 出版者 | NATURE PUBLISHING GROUP |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2373581 |
| 专题 | 物理研究所 |
| 通讯作者 | Yang, Hao |
| 作者单位 | 1.Nanjing Univ Aeronaut & Astronaut, Coll Sci, Nanjing 211106, Jiangsu, Peoples R China 2.Soochow Univ, Suzhou Nano Sci & Technol, Optoelect & Energy & Collaborat Innovat Ctr, Coll Phys, Suzhou 215006, Peoples R China 3.Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China 4.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China 5.Texas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA 6.Anhui Univ, Sch Phys & Mat Sci, Hefei 230039, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Weiwei,Zhang, Wei,Wang, Le,et al. Vertical interface induced dielectric relaxation in nanocomposite (batio3)(1-x):(sm2o3)(x) thin films[J]. Scientific reports,2015,5:8. |
| APA | Li, Weiwei.,Zhang, Wei.,Wang, Le.,Gu, Junxing.,Chen, Aiping.,...&Yang, Hao.(2015).Vertical interface induced dielectric relaxation in nanocomposite (batio3)(1-x):(sm2o3)(x) thin films.Scientific reports,5,8. |
| MLA | Li, Weiwei,et al."Vertical interface induced dielectric relaxation in nanocomposite (batio3)(1-x):(sm2o3)(x) thin films".Scientific reports 5(2015):8. |
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来源：物理研究所
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