Memory effect and negative differential resistance by electrode-induced two-dimensional single-electron tunneling in molecular and organic electronic devices
文献类型：期刊论文
| 作者 | Tang, W; Shi, HZ; Xu, G; Ong, BS; Popovic, ZD; Deng, JC; Zhao, J; Rao, GH |
| 刊名 | Advanced materials
 |
| 出版日期 | 2005-10-04 |
| 卷号 | 17期号:19页码:2307-+ |
| ISSN号 | 0935-9648 |
| DOI | 10.1002/adma.200500232 |
| 通讯作者 | Xu, g() |
| 英文摘要 | Mysterious negative differential resistances and memory effects are commonly observed in molecular electronic thin-film devices such as organic light-emitting diodes. the authors describe how this may result from the formation of metallic nanospheres (see figure) inside crevices resulting from defects, such as dust particles. single-electron tunneling between the nanospheres, which are formed by nucleation and growth processes at the defect sites, results in the observed anomalous effects. |
| WOS关键词 | LIGHT-EMITTING DEVICES ; COULOMB-BLOCKADE ; TRANSISTORS ; BISTABILITY ; MECHANISM ; TRANSPORT ; VOLTAGE ; FILMS ; PPV |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS类目 | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000232625900002 |
| 出版者 | WILEY-V C H VERLAG GMBH |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2373612 |
| 专题 | 物理研究所 |
| 通讯作者 | Xu, G |
| 作者单位 | 1.McMaster Univ, Dept Mat Sci & Engn, Hamilton, ON L8S 4L7, Canada 2.Xerox Res Ctr Canada Ltd, Mississauga, ON L5K 2L1, Canada 3.Tianjin Univ Technol, Inst Mat Phys, Tianjin 3000191, Peoples R China 4.Tianjin Normal Univ, Dept Phys, Tianjin 300074, Peoples R China 5.Acad Sinica, Inst Phys, Struct Lab, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Tang, W,Shi, HZ,Xu, G,et al. Memory effect and negative differential resistance by electrode-induced two-dimensional single-electron tunneling in molecular and organic electronic devices[J]. Advanced materials,2005,17(19):2307-+. |
| APA | Tang, W.,Shi, HZ.,Xu, G.,Ong, BS.,Popovic, ZD.,...&Rao, GH.(2005).Memory effect and negative differential resistance by electrode-induced two-dimensional single-electron tunneling in molecular and organic electronic devices.Advanced materials,17(19),2307-+. |
| MLA | Tang, W,et al."Memory effect and negative differential resistance by electrode-induced two-dimensional single-electron tunneling in molecular and organic electronic devices".Advanced materials 17.19(2005):2307-+. |
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来源：物理研究所
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