Growth of ndfeas(o1-xfx) single crystals at ambient pressure and their transport properties
文献类型:期刊论文
作者 | Fang, Lei; Cheng, Peng; Jia, Ying; Zhu, Xiyu; Luo, Huiqian; Mu, Gang; Gu, Changzhi; Wen, Hai-Hu |
刊名 | Journal of crystal growth
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出版日期 | 2009 |
卷号 | 311期号:2页码:358-361 |
关键词 | Doping Growth from melt Single crystal growth Oxides Rare earth compounds Superconducting materials |
ISSN号 | 0022-0248 |
DOI | 10.1016/j.jcrysgro.2008.10.030 |
通讯作者 | Fang, lei(lfang@ssc.iphy.ac.cn) |
英文摘要 | We report the growth of ndfeas(o1-xfx,) single crystal with nacl flux at ambient pressures. the typical sizes of these crystals are about 20-70 mu m. superconducting transition temperature for doping x = 0.3 sample is about 50 k. for non-superconducting parent sample ndfeaso a distinct kink at 150 k on resistivity curve is observed. x-ray diffraction with only (001) peaks on selected crystals shows good crystallization of crystal ndfeas(o1-xfx). (c) 2007 elsevier b.v. all rights reserved. |
WOS关键词 | ZRCUSIAS-TYPE-STRUCTURE ; LAYERED SUPERCONDUCTOR ; METAL |
WOS研究方向 | Crystallography ; Materials Science ; Physics |
WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
语种 | 英语 |
WOS记录号 | WOS:000263700300027 |
出版者 | ELSEVIER SCIENCE BV |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2373706 |
专题 | 物理研究所 |
通讯作者 | Fang, Lei |
作者单位 | 1.Natl Lab Superconductiv, Inst Phys, Beijing 100190, Peoples R China 2.Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China |
推荐引用方式 GB/T 7714 | Fang, Lei,Cheng, Peng,Jia, Ying,et al. Growth of ndfeas(o1-xfx) single crystals at ambient pressure and their transport properties[J]. Journal of crystal growth,2009,311(2):358-361. |
APA | Fang, Lei.,Cheng, Peng.,Jia, Ying.,Zhu, Xiyu.,Luo, Huiqian.,...&Wen, Hai-Hu.(2009).Growth of ndfeas(o1-xfx) single crystals at ambient pressure and their transport properties.Journal of crystal growth,311(2),358-361. |
MLA | Fang, Lei,et al."Growth of ndfeas(o1-xfx) single crystals at ambient pressure and their transport properties".Journal of crystal growth 311.2(2009):358-361. |
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来源:物理研究所
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