中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Recent progress in single chip white light-emitting diodes with the ingan underlying layer

文献类型:期刊论文

作者Wang XiaoLi; Wang XiaoHui; Jia HaiQiang; Xing ZhiGang; Chen Hong
刊名Science china-physics mechanics & astronomy
出版日期2010-03-01
卷号53期号:3页码:445-448
ISSN号1674-7348
关键词Gan Ingan White light led Mocvd
DOI10.1007/s11433-010-0132-z
通讯作者Wang xiaoli(xingfuhaifeng@yahoo.com.cn)
英文摘要Tremendous progress has been achieved in white light-emitting diodes (leds). to further improve the quality of white light and simplify the fabrication process, a single chip white-light led with the ingan underlying layer (ul) was studied and fabricated. the turn-on voltage of this type of led was 2.7 v, and the spectrum at a forward bias current of 20 ma was comprised of blue (443 nm) and yellow (563 nm) lights. the intensity ratio of blue to yellow light was almost constant with the increasing injection current in a certain scope, most important for the solid state illumination. the useful life test showed the light output level remained at a 90% light output level at the driving current of 40 ma after 300 h, meanwhile, the uv and blue leds combined with phosphor reached a 20% value after 144 h within 300 h.
WOS关键词MULTIQUANTUM-WELL ; EMISSION
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
出版者SCIENCE PRESS
WOS记录号WOS:000276661700013
URI标识http://www.irgrid.ac.cn/handle/1471x/2373746
专题物理研究所
通讯作者Wang XiaoLi
作者单位Acad Sinica, Inst Phys, Beijing Natl Lab Condensed Matter, Beijing 100080, Peoples R China
推荐引用方式
GB/T 7714
Wang XiaoLi,Wang XiaoHui,Jia HaiQiang,et al. Recent progress in single chip white light-emitting diodes with the ingan underlying layer[J]. Science china-physics mechanics & astronomy,2010,53(3):445-448.
APA Wang XiaoLi,Wang XiaoHui,Jia HaiQiang,Xing ZhiGang,&Chen Hong.(2010).Recent progress in single chip white light-emitting diodes with the ingan underlying layer.Science china-physics mechanics & astronomy,53(3),445-448.
MLA Wang XiaoLi,et al."Recent progress in single chip white light-emitting diodes with the ingan underlying layer".Science china-physics mechanics & astronomy 53.3(2010):445-448.

入库方式: iSwitch采集

来源:物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。