Thermoelectric properties of silicon carbide nanowires with nitride dopants and vacancies
文献类型：期刊论文
| 作者 | Xu, Zhuo; Zheng, Qing-Rong; Su, Gang |
| 刊名 | Physical review b
 |
| 出版日期 | 2011-12-30 |
| 卷号 | 84期号:24页码:9 |
| ISSN号 | 1098-0121 |
| DOI | 10.1103/physrevb.84.245451 |
| 通讯作者 | Xu, zhuo() |
| 英文摘要 | The thermoelectric properties of cubic zinc-blend silicon carbide nanowires (sicnws) with nitrogen impurities and vacancies along [111] direction are theoretically studied by means of atomistic simulations. it is found that the thermoelectric figure of merit zt of sicnws can be significantly enhanced by doping n impurities together with making si vacancies. aiming at obtaining a large zt, we study possible energetically stable configurations, and disclose that, when n dopants are located at the center, a small number of si vacancies at corners are most favored for n-type nanowires, while a large number of si vacancies spreading into the flat edge sites are most favored for p-type nanowires. for the sicnw with a diameter of 1.1 nm and a length of 4.6 nm, the zt value for the n-type is shown capable of reaching 1.78 at 900 k. the conditions to get higher zt values for longer sicnws are also addressed. |
| WOS关键词 | BI NANOWIRES ; TRANSPORT ; SYSTEMS ; FIGURE ; MERIT ; POWER ; HEAT |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000298639900005 |
| 出版者 | AMER PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2373748 |
| 专题 | 物理研究所 |
| 通讯作者 | Xu, Zhuo |
| 作者单位 | Chinese Acad Sci, Grad Univ, Coll Phys Sci, Theoret Condensed Matter Phys & Computat Mat Phys, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xu, Zhuo,Zheng, Qing-Rong,Su, Gang. Thermoelectric properties of silicon carbide nanowires with nitride dopants and vacancies[J]. Physical review b,2011,84(24):9. |
| APA | Xu, Zhuo,Zheng, Qing-Rong,&Su, Gang.(2011).Thermoelectric properties of silicon carbide nanowires with nitride dopants and vacancies.Physical review b,84(24),9. |
| MLA | Xu, Zhuo,et al."Thermoelectric properties of silicon carbide nanowires with nitride dopants and vacancies".Physical review b 84.24(2011):9. |
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