Rational design of a binary metal alloy for chemical vapour deposition growth of uniform single-layer graphene
文献类型：期刊论文
| 作者 | Dai, Boya1; Fu, Lei1,2; Zou, Zhiyu2; Wang, Min1; Xu, Haitao3; Wang, Sheng3; Liu, Zhongfan1 |
| 刊名 | Nature communications
 |
| 出版日期 | 2011-11-01 |
| 卷号 | 2页码:6 |
| ISSN号 | 2041-1723 |
| DOI | 10.1038/ncomms1539 |
| 通讯作者 | Liu, zhongfan(zfliu@pku.edu.cn) |
| 英文摘要 | Controlled growth of high-quality graphene is still the bottleneck of practical applications. the widely used chemical vapour deposition process generally suffers from an uncontrollable carbon precipitation effect that leads to inhomogeneous growth and strong correlation to the growth conditions. here we report the rational design of a binary metal alloy that effectively suppresses the carbon precipitation process and activates a self-limited growth mechanism for homogeneous monolayer graphene. as demonstrated by an ni-mo alloy, the designed binary alloy contains an active catalyst component for carbon source decomposition and graphene growth and a black hole counterpart for trapping the dissolved carbons and forming stable metal carbides. this type of process engineering has been used to grow strictly single-layer graphene with 100% surface coverage and excellent tolerance to variations in growth conditions. with simplicity, scalability and a very large growth window, the presented approach may facilitate graphene research and industrial applications. |
| WOS关键词 | BILAYER GRAPHENE ; POLYCRYSTALLINE NI ; FILMS ; CARBON |
| WOS研究方向 | Science & Technology - Other Topics |
| WOS类目 | Multidisciplinary Sciences |
| 语种 | 英语 |
| WOS记录号 | WOS:000297686500009 |
| 出版者 | NATURE PUBLISHING GROUP |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2373757 |
| 专题 | 物理研究所 |
| 通讯作者 | Liu, Zhongfan |
| 作者单位 | 1.Peking Univ, Ctr Nanochem CNC, Beijing Natl Lab Mol Sci,Coll Chem & Mol Engn, State Key Lab Struct Chem Unstable Stable Species, Beijing 100871, Peoples R China 2.Peking Univ, Acad Adv Interdisciplinary Studies, Beijing 100871, Peoples R China 3.Peking Univ, Dept Elect, Beijing 100871, Peoples R China |
| 推荐引用方式 GB/T 7714 | Dai, Boya,Fu, Lei,Zou, Zhiyu,et al. Rational design of a binary metal alloy for chemical vapour deposition growth of uniform single-layer graphene[J]. Nature communications,2011,2:6. |
| APA | Dai, Boya.,Fu, Lei.,Zou, Zhiyu.,Wang, Min.,Xu, Haitao.,...&Liu, Zhongfan.(2011).Rational design of a binary metal alloy for chemical vapour deposition growth of uniform single-layer graphene.Nature communications,2,6. |
| MLA | Dai, Boya,et al."Rational design of a binary metal alloy for chemical vapour deposition growth of uniform single-layer graphene".Nature communications 2(2011):6. |
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来源：物理研究所
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