Scanning tunneling microscopy study of gaas(001) surfaces
文献类型：期刊论文
| 作者 | Xue, QK; Hashizume, T; Sakurai, T |
| 刊名 | Applied surface science
 |
| 出版日期 | 1999-03-01 |
| 卷号 | 141期号:3-4页码:244-263 |
| 关键词 | Gaas Molecular beam epitaxy Scanning tunneling microscopy Reflection high energy electron diffraction First-principles total energy calculations |
| ISSN号 | 0169-4332 |
| 通讯作者 | Sakurai, t(sakurai@apfim.imr.tohoku.ac.jp) |
| 英文摘要 | While gaas(001) is the most commonly used substrate in fabrication of wireless and opto-electronic devices based on iii-v compound semiconductors by molecular beam epitaxy (mbe), metallorganic chemical vapor deposition (mocvd) and related techniques, its surface structure have been disputed since the beginning of development of the techniques. invention of scanning tunneling microscopy (stm) has revolutionized the approach of surface/interface investigation, contributing greatly in the atomistic understanding of the gaas surface phases. this paper reviews the stm studies of principal reconstructions, from as-rich c(4 x 4), 2 x 4, 2 x 6 to ga-rich 4 x 2 and 4 x 6, found on the gaas (001) surface. these studies, together with advanced theoretical efforts, have helped us to establish a unified structural model for various reconstructions, with which we can now explain most of the observations and long-standing controversies in atomic structures and surface stoichiometries. (c) 1999 elsevier science b.v. all rights reserved. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; ELECTRON-REFLECTIVITY MEASUREMENTS ; ENERGY-LOSS SPECTROSCOPY ; GAAS 100 SURFACES ; GAAS(100) SURFACES ; 001 GAAS ; GROWN GAAS(001) ; SEMICONDUCTOR SURFACES ; STRUCTURE TRANSITION ; ULTRAHIGH-VACUUM |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| WOS类目 | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000079191700007 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2373863 |
| 专题 | 物理研究所 |
| 通讯作者 | Sakurai, T |
| 作者单位 | 1.Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan 2.Acad Sinica, Inst Phys, Beijing 100080, Peoples R China 3.Hitachi Ltd, Adv Res Lab, Hatoyama, Saitama 35003, Japan |
| 推荐引用方式 GB/T 7714 | Xue, QK,Hashizume, T,Sakurai, T. Scanning tunneling microscopy study of gaas(001) surfaces[J]. Applied surface science,1999,141(3-4):244-263. |
| APA | Xue, QK,Hashizume, T,&Sakurai, T.(1999).Scanning tunneling microscopy study of gaas(001) surfaces.Applied surface science,141(3-4),244-263. |
| MLA | Xue, QK,et al."Scanning tunneling microscopy study of gaas(001) surfaces".Applied surface science 141.3-4(1999):244-263. |
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