Negative differential capacitance of quantum dots
文献类型：期刊论文
| 作者 | Wang, SD; Sun, ZZ; Cue, N; Xu, HQ; Wang, XR |
| 刊名 | Physical review b
 |
| 出版日期 | 2002-03-15 |
| 卷号 | 65期号:12页码:4 |
| ISSN号 | 1098-0121 |
| DOI | 10.1103/physrevb.65.125307 |
| 通讯作者 | Wang, sd() |
| 英文摘要 | The dependence of charges accumulated on a quantum dot under an external voltage bias is studied. the charge is sensitive to the changes of number of filled levels and the number of conducting levels (channels). we clarify that there are two possible outcomes of applying a bias. (a) the number of conducting channels increases, but the number of filled levels decreases. (b) the number of filled levels increases or does not change while the number of conducting channels (levels) increases with the bias. in case (b), charges are generally expected to increase monotonically with the applied bias. we show, however, that this expectation may not materialize when the electron transmission coefficients depend on bias. numerical evidences and a theoretical explanation of this negative differential capacitance, i.e., charges accumulated on a quantum dot decrease with applied bias, are presented. |
| WOS关键词 | COULOMB-BLOCKADE OSCILLATIONS ; ANDERSON MODEL ; CONDUCTANCE ; CHARGE ; FLUCTUATIONS ; EQUILIBRIUM ; TRANSPORT |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000174938800055 |
| 出版者 | AMER PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2373928 |
| 专题 | 物理研究所 |
| 通讯作者 | Wang, SD |
| 作者单位 | 1.Hong Kong Univ Sci & Technol, Dept Phys, Clear Water Bay, Hong Kong, Peoples R China 2.Lund Univ, SE-22100 Lund, Sweden 3.Chinese Acad Sci, Int Ctr Quantum Struct, Beijing, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, SD,Sun, ZZ,Cue, N,et al. Negative differential capacitance of quantum dots[J]. Physical review b,2002,65(12):4. |
| APA | Wang, SD,Sun, ZZ,Cue, N,Xu, HQ,&Wang, XR.(2002).Negative differential capacitance of quantum dots.Physical review b,65(12),4. |
| MLA | Wang, SD,et al."Negative differential capacitance of quantum dots".Physical review b 65.12(2002):4. |
入库方式： iSwitch采集
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。