The substantial dislocation reduction by preferentially passivating etched defect pits in gan epitaxial growth
文献类型：期刊论文
| 作者 | Hu,Wei1,2; Die,Junhui1,2; Wang,Caiwei1,2; Yan,Shen1,2; Hu,Xiaotao1,2; Du,Chunhua1,2; Jiang,Yang1,2; Deng,Zhen1,2; Wang,Lu1,2; Jia,Haiqiang1,3,4 |
| 刊名 | Applied physics express
 |
| 出版日期 | 2019-02-15 |
| 卷号 | 12期号:3 |
| 关键词 | Gallium nitride Defect preferential passivation In situ sinx Dislocation reduction Prevention effect |
| ISSN号 | 1882-0778 |
| DOI | 10.7567/1882-0786/ab038d |
| 通讯作者 | Ma,ziguang() ; Chen,hong() |
| 英文摘要 | Abstract we demonstrate the use of in situ sinx preferentially deposited on the etched defect pits as a mask to block the propagation of threading dislocations (tds). etch pits are generated on the gan template using the wet etching technique. the sinx layer is then deposited on etch pits, followed by a regrown gan layer. it turns out that a 60% reduction in td density of the gan epilayer is obtained compared with the conventional gan growth method. the significant improvement is more attributed to the prevention effect by covering etch pits rather than the merging effect by reorienting the dislocation propagation. |
| 语种 | 英语 |
| WOS记录号 | IOP:1882-0778-12-3-AB038D |
| 出版者 | IOP Publishing |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2373985 |
| 专题 | 物理研究所 |
| 通讯作者 | Ma,Ziguang; Chen,Hong |
| 作者单位 | 1.Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China 2.University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China 3.Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China 4.Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People’s Republic of China |
| 推荐引用方式 GB/T 7714 | Hu,Wei,Die,Junhui,Wang,Caiwei,et al. The substantial dislocation reduction by preferentially passivating etched defect pits in gan epitaxial growth[J]. Applied physics express,2019,12(3). |
| APA | Hu,Wei.,Die,Junhui.,Wang,Caiwei.,Yan,Shen.,Hu,Xiaotao.,...&Chen,Hong.(2019).The substantial dislocation reduction by preferentially passivating etched defect pits in gan epitaxial growth.Applied physics express,12(3). |
| MLA | Hu,Wei,et al."The substantial dislocation reduction by preferentially passivating etched defect pits in gan epitaxial growth".Applied physics express 12.3(2019). |
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来源：物理研究所
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