Effects of high pressure on the ferromagnetism and in-plane electrical transport of (ba0.904k0.096)(zn0.805mn0.195)2as2 single crystal
文献类型：期刊论文
| 作者 | Zhao,G Q1,2; Li,Z3; Sun,F1,2; Yuan,Z1,2; Chen,B J1,2; Yu,S1,2; Peng,Y1,4; Deng,Z1; Wang,X C1; Jin,C Q1,2,5 |
| 刊名 | Journal of physics: condensed matter
 |
| 出版日期 | 2018-05-29 |
| 卷号 | 30期号:25 |
| 关键词 | Diluted magnetic semiconductor Curie temperature Hydrostatic pressure Mnas4 tetrahedra |
| ISSN号 | 0953-8984 |
| DOI | 10.1088/1361-648x/aac367 |
| 英文摘要 | Abstract pressure technique is an effective way to modify magnetic properties of diluted magnetic semiconductors (dms). based on single crystal, in-plane electrical transport properties of a new generation dms (ba0.904k0.096)(zn0.805mn0.195)2as2 have been measured with hydrostatic pressure up to 1.8?gpa. magnetic properties of the single crystal sample are effectively tuned by pressure. upon compression, the in-plane resistivity initially decreases but then increases when pressure is higher than 1.2?gpa. first principle calculations suggest that decrease of the resistivity is due to enhancement of density of state at femi energy while increase of the resistivity under higher pressure is caused by distorted mnas4 tetrahedra. we reveal that the configuration of the mnas4 tetrahedra and strength of interlayer as–as bonding are of importance to ferromagnetic coupling of (ba,k)(zn,mn)2as2. |
| 语种 | 英语 |
| WOS记录号 | IOP:0953-8984-30-25-AAC367 |
| 出版者 | IOP Publishing |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2373993 |
| 专题 | 物理研究所 |
| 作者单位 | 1.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China 2.School of Physics, University of Chinese Academy of Sciences, Beijing 100190, People’s Republic of China 3.School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, People’s Republic of China 4.Department of Materials Science, Sichuan University, Chengdu 610064, People’s Republic of China 5.Collaborative Innovation Center of Quantum Matter, Beijing 100871, People’s Republic of China |
| 推荐引用方式 GB/T 7714 | Zhao,G Q,Li,Z,Sun,F,et al. Effects of high pressure on the ferromagnetism and in-plane electrical transport of (ba0.904k0.096)(zn0.805mn0.195)2as2 single crystal[J]. Journal of physics: condensed matter,2018,30(25). |
| APA | Zhao,G Q.,Li,Z.,Sun,F.,Yuan,Z.,Chen,B J.,...&Jin,C Q.(2018).Effects of high pressure on the ferromagnetism and in-plane electrical transport of (ba0.904k0.096)(zn0.805mn0.195)2as2 single crystal.Journal of physics: condensed matter,30(25). |
| MLA | Zhao,G Q,et al."Effects of high pressure on the ferromagnetism and in-plane electrical transport of (ba0.904k0.096)(zn0.805mn0.195)2as2 single crystal".Journal of physics: condensed matter 30.25(2018). |
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