Self-aligned photolithography for the fabrication of fully transparent high-voltage devices
文献类型：期刊论文
| 作者 | Zhang,Yonghui1,2; Mei,Zengxia1; Huo,Wenxing1,2; Wang,Tao1; Liang,Huili1; Du,Xiaolong1,2 |
| 刊名 | Journal of physics d: applied physics
 |
| 出版日期 | 2018-04-04 |
| 卷号 | 51期号:17 |
| 关键词 | High-voltage Self-aligned Thin film transistors Diodes Inverters Transparent |
| ISSN号 | 0022-3727 |
| DOI | 10.1088/1361-6463/aab638 |
| 英文摘要 | Abstract high-voltage devices, working in the range of hundreds of volts, are indispensable elements in the driving or readout circuits for various kinds of displays, integrated microelectromechanical systems and x-ray imaging sensors. however, the device performances are found hardly uniform or repeatable due to the misalignment issue, which are extremely common for offset drain high-voltage devices. to resolve this issue, this article reports a set of self-aligned photolithography technology for the fabrication of high-voltage devices. high-performance fully-transparent high-voltage thin film transistors, diodes and logic inverters are successfully fabricated with this technology. unlike other self-aligned routes, opaque masks are introduced on the backside of the transparent substrate to facilitate proximity exposure method. the photolithography process is simulated and analyzed with technology computer aided design simulation to explain the working principle of the proximity exposure method. the substrate thickness is found to be vital for the implementation of this technology based on both simulation and experimental results. the electrical performance of high-voltage devices is dependent on the offset length, which can be delicately modulated by changing the exposure dose. the presented self-aligned photolithography technology is proved to be feasible in high-voltage circuits, demonstrating its huge potential in practical industrial applications. |
| 语种 | 英语 |
| WOS记录号 | IOP:0022-3727-51-17-AAB638 |
| 出版者 | IOP Publishing |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2373998 |
| 专题 | 物理研究所 |
| 作者单位 | 1.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China 2.School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China |
| 推荐引用方式 GB/T 7714 | Zhang,Yonghui,Mei,Zengxia,Huo,Wenxing,et al. Self-aligned photolithography for the fabrication of fully transparent high-voltage devices[J]. Journal of physics d: applied physics,2018,51(17). |
| APA | Zhang,Yonghui,Mei,Zengxia,Huo,Wenxing,Wang,Tao,Liang,Huili,&Du,Xiaolong.(2018).Self-aligned photolithography for the fabrication of fully transparent high-voltage devices.Journal of physics d: applied physics,51(17). |
| MLA | Zhang,Yonghui,et al."Self-aligned photolithography for the fabrication of fully transparent high-voltage devices".Journal of physics d: applied physics 51.17(2018). |
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来源：物理研究所
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