Rectifying behavior in the gan/graded-alxga1?xn/gan double heterojunction structure
文献类型：期刊论文
| 作者 | Wang,Caiwei1,2; Jiang,Yang1,2; Ma,Ziguang1,2; Zuo,Peng1,2; Yan,Shen1,2; Die,Junhui1,2; Wang,Lu1,2; Jia,Haiqiang1,2; Wang,Wenxin1,2; Chen,Hong1,2 |
| 刊名 | Journal of physics d: applied physics
 |
| 出版日期 | 2018-04-30 |
| 卷号 | 51期号:20 |
| 关键词 | Rectification Heterojunction Polarization |
| ISSN号 | 0022-3727 |
| DOI | 10.1088/1361-6463/aab8c6 |
| 英文摘要 | Abstract rectifying characteristics induced by the polarization fields are achieved in the gan/graded-alxga1?xn/gan double heterojunction structure (dhs). by grading alxga1?xn from x??=??0.4(0.3) to 0.1, the dhs displays a better conductivity for smaller reverse bias than for forward bias voltages (reverse rectifying behavior) which is opposite to p–n junction rectifying characteristics. the mechanism of reverse rectifying behavior is illustrated via calculating the energy band structures of the samples. the band gap narrowing caused by decreasing al composition could compensate the for the band tilt due to the polarization effect in alxga1?xn barriers, thus lowering the barrier height for electron transport from top to bottom. the reverse rectifying behavior could be enhanced by increasing the al content and the thickness of the multi-layer graded alxga1?xn barriers. this work gives a better understanding of the mechanism of carrier transport in a dhs and makes it possible to realize novel gan-based heterojunction transistors. |
| 语种 | 英语 |
| WOS记录号 | IOP:0022-3727-51-20-AAB8C6 |
| 出版者 | IOP Publishing |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2373999 |
| 专题 | 物理研究所 |
| 作者单位 | 1.Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China 2.University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China |
| 推荐引用方式 GB/T 7714 | Wang,Caiwei,Jiang,Yang,Ma,Ziguang,et al. Rectifying behavior in the gan/graded-alxga1?xn/gan double heterojunction structure[J]. Journal of physics d: applied physics,2018,51(20). |
| APA | Wang,Caiwei.,Jiang,Yang.,Ma,Ziguang.,Zuo,Peng.,Yan,Shen.,...&Chen,Hong.(2018).Rectifying behavior in the gan/graded-alxga1?xn/gan double heterojunction structure.Journal of physics d: applied physics,51(20). |
| MLA | Wang,Caiwei,et al."Rectifying behavior in the gan/graded-alxga1?xn/gan double heterojunction structure".Journal of physics d: applied physics 51.20(2018). |
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来源：物理研究所
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