Metal-semiconductor transition at a comparable resistivity level and positive magnetoresistance in mn3mn1?xpdxn thin films
文献类型：期刊论文
| 作者 | Xu,T1,2; Ji,G P1,2; Cao,Z X1; Ji,A L1 |
| 刊名 | Journal of physics d: applied physics
 |
| 出版日期 | 2018-01-12 |
| 卷号 | 51期号:5 |
| 关键词 | Antiperovskite manganese nitride Thin film Metal-semiconductor transition Positive magnetoresistance |
| ISSN号 | 0022-3727 |
| DOI | 10.1088/1361-6463/aaa258 |
| 英文摘要 | Abstract thin films of antiperovskite mn3mn1?xpdxn with x up to 0.36 were grown by reactive magnetron co-sputtering method. all the deposits exhibit a [1?0?0] preferential orientation, with the lattice constant slightly enlarged in samples with ever more pd atoms partially substituting the mni atoms in mn3mnn matrix. the replacement of mni atoms in antiperovskite structure by pd atoms, besides reducing the saturation magnetization, also invokes a metal-semiconductor transition which occurs remarkably at a comparable resistivity level. moreover, a positive magnetoresistance was observed in samples of a high pd content. these tunable electrical and magnetic properties of ternary antiperovskite compounds might promise some ingenious applications in electronic industry. |
| 语种 | 英语 |
| WOS记录号 | IOP:0022-3727-51-5-AAA258 |
| 出版者 | IOP Publishing |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2374013 |
| 专题 | 物理研究所 |
| 作者单位 | 1.Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China 2.University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China |
| 推荐引用方式 GB/T 7714 | Xu,T,Ji,G P,Cao,Z X,et al. Metal-semiconductor transition at a comparable resistivity level and positive magnetoresistance in mn3mn1?xpdxn thin films[J]. Journal of physics d: applied physics,2018,51(5). |
| APA | Xu,T,Ji,G P,Cao,Z X,&Ji,A L.(2018).Metal-semiconductor transition at a comparable resistivity level and positive magnetoresistance in mn3mn1?xpdxn thin films.Journal of physics d: applied physics,51(5). |
| MLA | Xu,T,et al."Metal-semiconductor transition at a comparable resistivity level and positive magnetoresistance in mn3mn1?xpdxn thin films".Journal of physics d: applied physics 51.5(2018). |
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