Homoepitaxial srtio3(111) film with high dielectric performance and atomically well-defined surface
文献类型：期刊论文
| 作者 | Liang, Yan1,2,3,4; Li, Wentao3,4; Zhang, Shuyuan3,4; Lin, Chaojing3,4; Li, Chao3,4; Yao, Yuan3,4; Li, Yongqing3,4; Yang, Hao1,2,5; Guo, Jiandong3,4,6 |
| 刊名 | Scientific reports
 |
| 出版日期 | 2015-06-15 |
| 卷号 | 5页码:7 |
| ISSN号 | 2045-2322 |
| DOI | 10.1038/srep10634 |
| 通讯作者 | Yang, hao(yanghao@nuaa.edu.cn) |
| 英文摘要 | The six-fold symmetry possessed by the (111) surfaces of perovskite oxides allows the epitaxial growth of novel quantum materials such as topological insulators. the dielectric srtio3(111) thin film is an ideal buffer layer, providing the readily tunability of charge density in gate-controlled structures. but the high-quality film growth is challenging due to its strong surface polarity as well as the difficulty of obtaining the chemical stoichiometry. here we show that the layer-by-layer growth of homoepitaxial srtio3(111) thin films can be achieved in molecular beam epitaxy method by keeping the growing surface reconstructed. and the cation stoichiometry is optimized precisely with the reflective high energy electron diffraction as the feedback signal that changes sensitively to the variation of metal concentration during growth. with atomically well-defined surfaces, the srtio3(111) films show high dielectric performance with the charge density modulated in the range of 2 x 10(13)/cm(2) with the back gate voltage lower than 0.2 v. methods of further broadening the range are also discussed. |
| WOS关键词 | OXIDE HETEROSTRUCTURES ; THIN-FILMS ; INTERFACE ; SUPERLATTICES ; CONSTANT ; GROWTH |
| WOS研究方向 | Science & Technology - Other Topics |
| WOS类目 | Multidisciplinary Sciences |
| 语种 | 英语 |
| WOS记录号 | WOS:000356503200001 |
| 出版者 | NATURE PUBLISHING GROUP |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2374073 |
| 专题 | 物理研究所 |
| 通讯作者 | Yang, Hao |
| 作者单位 | 1.Soochow Univ, Coll Phys Optoelect & Energy, Suzhou 215006, Peoples R China 2.Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Suzhou 215006, Peoples R China 3.Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China 4.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China 5.Nanjing Univ Aeronaut & Astronaut, Coll Sci, Nanjing 211106, Jiangsu, Peoples R China 6.Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liang, Yan,Li, Wentao,Zhang, Shuyuan,et al. Homoepitaxial srtio3(111) film with high dielectric performance and atomically well-defined surface[J]. Scientific reports,2015,5:7. |
| APA | Liang, Yan.,Li, Wentao.,Zhang, Shuyuan.,Lin, Chaojing.,Li, Chao.,...&Guo, Jiandong.(2015).Homoepitaxial srtio3(111) film with high dielectric performance and atomically well-defined surface.Scientific reports,5,7. |
| MLA | Liang, Yan,et al."Homoepitaxial srtio3(111) film with high dielectric performance and atomically well-defined surface".Scientific reports 5(2015):7. |
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来源：物理研究所
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