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Study on interactions between cadmium and defects in cd-doped zno by first-principle calculations

文献类型:期刊论文

作者Tang, Xin1,2,3; Lue, Haifeng4; Zhang, Qingyu3; Zhao, Jijun3; Lin, Yuyuan5
刊名Solid state sciences
出版日期2011-02-01
卷号13期号:2页码:384-387
关键词Cd-dopped zno N-type carrier Density functional theory
ISSN号1293-2558
DOI10.1016/j.solidstatesciences.2010.11.040
通讯作者Tang, xin(xtang@glite.edu.cn)
英文摘要An ab initio calculation based on density functional theory is applied to study the formation energy and transition energy level of defects and complexes in cd-dopped zno. the calculation shows that the incorporation of cd into zno leads to the increase of the o vacancies (v(o)). v(o) exists in the form of cd(zn)-v(o) complex, which can balance the strain caused by cd(zn) and v(o). due to high formation energy of the zn interstitials (zn(i)) and deep transition energy level of v(o), zn(i) and v(o) cannot serve singly as the source of the n-type carriers in cd-dopped zno. it is also found that the zn(i)-cd(zn)-v(o) complex is a shallow donor like zn(i), but has lower formation energy. thus, the source of n-type carriers is believed to be a complex with zn(i)-cd(zn)-v(o) structures in cd-doped zno. (c) 2010 elsevier masson sas. all rights reserved.
WOS关键词AUGMENTED-WAVE METHOD ; LIGHT-EMITTING-DIODES ; THIN-FILMS ; SEMICONDUCTORS ; MGXZN1-XO ; ALLOY
WOS研究方向Chemistry ; Physics
WOS类目Chemistry, Inorganic & Nuclear ; Chemistry, Physical ; Physics, Condensed Matter
语种英语
WOS记录号WOS:000287907700016
出版者ELSEVIER SCIENCE BV
URI标识http://www.irgrid.ac.cn/handle/1471x/2374139
专题计算机网络信息中心
通讯作者Tang, Xin
作者单位1.Guilin Univ Technol, Minist Educ, Key Lab New Proc Technol Nonferrous Met & Mat, Guilin 541004, Peoples R China
2.Guilin Univ Technol, Coll Mat Sci & Engn, Guilin 541004, Peoples R China
3.Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Elect Beams, Dalian 116024, Peoples R China
4.Chinese Acad Sci, Comp Network Informat Ctr, Beijing 10080, Peoples R China
5.Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
推荐引用方式
GB/T 7714
Tang, Xin,Lue, Haifeng,Zhang, Qingyu,et al. Study on interactions between cadmium and defects in cd-doped zno by first-principle calculations[J]. Solid state sciences,2011,13(2):384-387.
APA Tang, Xin,Lue, Haifeng,Zhang, Qingyu,Zhao, Jijun,&Lin, Yuyuan.(2011).Study on interactions between cadmium and defects in cd-doped zno by first-principle calculations.Solid state sciences,13(2),384-387.
MLA Tang, Xin,et al."Study on interactions between cadmium and defects in cd-doped zno by first-principle calculations".Solid state sciences 13.2(2011):384-387.

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