中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Modeling of spectral shift in raman spectroscopy, photo- and electro-luminescence induced by electric field tuning of graphene related electronic devices

文献类型:期刊论文

作者Mao, Ling-Feng1; Wang, Jue2; Li, L.1; Ning, H.1; Hu, Changjun1
刊名Carbon
出版日期2017-08-01
卷号119页码:446-452
ISSN号0008-6223
DOI10.1016/j.carbon.2017.04.070
通讯作者Mao, ling-feng(lingfengmao@ustb.edu.cn) ; Wang, jue(wangjue@sccas.cn) ; Hu, changjun(huchangjun@ies.ustb.edu.cn)
英文摘要The continuous tuning of the emission (absorption) spectra of the excitons in graphene field-effect transistors by the gate (drain) voltage is of great technological significance. and its physical mechanism still remains to be unraveled. a new physical model of the electric field dependent exciton energy and its impacts on the emission (absorption) spectra is proposed based on the ambipolar transport theory with the energy balance assumption. by comparing the shift in the emission (absorption) peak predicted by the proposed model with those experimental data reported in the literature, we could conclude that the energy relaxation of the excitons plays a dominant role in the spectral shift. thus, the energy relaxation of the excitons is a physical origin for the gate (drain) voltage dependent spectral shift. the proposed model predicates that the gate control of the spectral shift depends on the channel length, the gate oxide thickness, the dielectric constant of the gate oxide, the thickness of the graphene layer, and the dielectric constant of the graphene, whereas the drain control of the spectral shift is mainly determined by the channel length. these findings will benefit to better understand the effect of the electric field on the emission (absorption) spectrum. (c) 2017 elsevier ltd. all rights reserved.
WOS关键词EFFECT TRANSISTORS ; SEMICONDUCTOR ; LIGHT ; ENERGY
WOS研究方向Chemistry ; Materials Science
WOS类目Chemistry, Physical ; Materials Science, Multidisciplinary
语种英语
WOS记录号WOS:000402713300053
出版者PERGAMON-ELSEVIER SCIENCE LTD
URI标识http://www.irgrid.ac.cn/handle/1471x/2374219
专题计算机网络信息中心
通讯作者Mao, Ling-Feng; Wang, Jue; Hu, Changjun
作者单位1.Univ Sci & Technol Beijing, Sch Comp & Commun Engn, 30 Xueyuan Rd, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Comp Network Informat Ctr, Beijing 100190, Peoples R China
推荐引用方式
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Mao, Ling-Feng,Wang, Jue,Li, L.,et al. Modeling of spectral shift in raman spectroscopy, photo- and electro-luminescence induced by electric field tuning of graphene related electronic devices[J]. Carbon,2017,119:446-452.
APA Mao, Ling-Feng,Wang, Jue,Li, L.,Ning, H.,&Hu, Changjun.(2017).Modeling of spectral shift in raman spectroscopy, photo- and electro-luminescence induced by electric field tuning of graphene related electronic devices.Carbon,119,446-452.
MLA Mao, Ling-Feng,et al."Modeling of spectral shift in raman spectroscopy, photo- and electro-luminescence induced by electric field tuning of graphene related electronic devices".Carbon 119(2017):446-452.

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